APT77N60BC6

APT77N60BC6 APT77N60SC6 600V 77A 0.041Ω C OLMOS O Power Semiconductors Super Junction MOSFET TO -2 47 • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package. D3PAK D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings per die: TC = 25°C unless otherwise specified. APT77N60B_SC6 600 77 49 272 ±20 481 - 55 to 150 300 13.4 2 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 2 Volts Watts °C Amps mJ Repetitive Avalanche Energy ( Id =13.4A, Vdd = 50V ) ( Id = 13.4A, Vdd = 50V ) 2.96 1954 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 3 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 44.4A) .037 .041 25 250 ±100 Ohms μA 050-7210 Rev A 8-2010 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 25°C) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA) 2.5 3 nA Volts 3.6 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 APT77N60B_SC6 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 77A @ 25°C INDUCTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 25°C RG = 5.0Ω 5 MIN TYP 13600 4400 290 260 38 144 18 27 110 8 1670 2880 2300 3100 MAX UNIT pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 5 nC 165 12 ns INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω MIN μJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage dv 1 3 TYP MAX 77 231 UNIT Amps Volts V/ns ns μC Amps (Body Diode) (VGS = 0V, IS = -77A) 6 1 1.2 15 /dt Peak Diode Recovery /dt Reverse Recovery Time (IS = -77A, di/dt = 100A/ μs) t rr Q rr IRRM Tj = 25°C Tj = 25°C Tj = 25°C 950 32 60 Reverse Recovery Charge (IS = -77A, di/dt = 100A/ μs) Peak Recovery Current (IS = -77A, di/dt = 100A/ μs) Characteristic Junction to Case Junction to Ambient THERMAL CHARACTERISTICS Symbol RθJC RθJA MIN TYP MAX 0.26 40 UNIT °C/W 4 See MIL-STD-750 Method 3471 2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.30 ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 0.20 0.15 0.10 0.05 0 D = 0.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature 0.7 0.5 0.3 0.1 0.05 10 -5 Note: 050-7210 Rev A 8-2010 PDM t1 t2 SINGLE PULSE 10 -4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Typical Performance Curves 250 15V 10V 7.5V 150 7.0V 6.5V 6.0V 50 5.5V 5V 0 0 ID, DRAIN CURRENT (A) 25 VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @