APT77N60JC3_09

APT77N60JC3 600V 77A 0.035Ω S D Super Junction MOSFET C OLMOS O Power Semiconductors S G SO ISOTOP fi 2 T- 27 • Ultra low RDS(ON) • Ultra Low Gate Charge, Qg • Popular SOT-227 Package • Low Miller Capacitance • Avalanche Energy Rated • N-Channel Enhancement Mode "UL Recongnized" file # 145592 D G S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv All Ratings: TC = 25°C unless otherwise specified. APT77N60JC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 600 77 231 ±20 ±30 568 4.55 -55 to 150 300 50 20 1 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ /dt IAR EAR EAS Single Pulse Avalanche Energy 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 .030 1.0 0.035 50 500 ±200 2.1 3 3.9 (VGS = 10V, ID = 60A) Ohms μA 050-7146 Rev G 11-2009 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.4mA) nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT77N60JC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 125°C RG = 0.9Ω 6 MIN TYP MAX UNIT 13600 4400 290 505 48 240 18 27 110 8 1670 2880 2300 3100 μJ 165 12 ns 640 nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns μC 77 231 1 861 46 6 1.2 (Body Diode) (VGS = 0V, IS = - 77A) Reverse Recovery Time (IS = -77A, dl S/dt = 100A/μs, VR = 350V) Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/μs, VR = 350V) Peak Diode Recovery dv /dt /dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID77A di/dt ≤ 700A/μs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.20 0.9 0.15 0.7 0.5 0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE Note: 050-7146 Rev G 11-2009 PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance ID, DRAIN CURRENT (AMPERES) 200 180 160 140 120 100 80 60 40 20 0 APT77N60JC3 VGS =15 &10V 6V & 6.5V 5.5V TJ ( C) 0.00999 Dissipated Power (Watts) 0.00421 0.00198 0.0129 0.314 0.0212 0.0724 TC ( C) 0.116 5V ZEXT 4.5V 4V ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 200 180 ID, DRAIN CURRENT (AMPERES) 160 140 120 100 80 60 40 20 0 TJ = +125°C 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +25°C VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @