APT8018JN

S S D D G G 27 2 T- SO APT8018JN S 800V 0.18Ω 40A "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage UNIT 800 Volts 40 Continuous Drain Current @ TC = 25°C 1 APT 8018JN Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage ±30 Volts Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C PD TJ,TSTG TL 160 and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number APT8018JN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current MIN TYP MAX 800 Volts 2 APT8018JN 40 Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance UNIT 2 0.18 APT8018JN Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, I D = 5.0mA) 2 THERMAL CHARACTERISTICS Characteristic MIN RΘJC Junction to Case RΘCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP 0.18 0.05 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-8038 Rev E Symbol APT8018JN DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 11715 14000 Coss Output Capacitance VDS = 25V 1430 2000 Crss Reverse Transfer Capacitance f = 1 MHz 460 690 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) VGS = 10V 468 700 VDD = 0.5 VDSS 72 110 ID = ID [Cont.] @ 25°C 176 265 3 VGS = 15V 21 40 VDD = 0.5 VDSS 19 40 ID = ID [Cont.] @ 25°C 70 105 RG = 0.6Ω 13 25 TYP MAX Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions Continuous Source Current (Body Diode) IS MIN APT8018JN 40 APT8018JN 160 UNIT Amps ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs) 945 1800 ns Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs) 36 60 µC TYP MAX UNIT (VGS = 0V, IS = -ID [Cont.]) 1.8 Volts PACKAGE CHARACTERISTICS Symbol Characteristic / Test Conditions MIN LD Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) 3 LS Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) 5 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) CIsolation Drain-to-Mounting Base Capacitance (f = 1MHz) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. nH 2500 Volts 70 pF 13 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.1 D=0.5 0.05 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-8038 Rev E 0.2 0.01 t1 t2 0.001 0.0005 10-5 SINGLE PULSE 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION in-lbs APT8018JN 100 100 80 5.5V 60 5V 40 4.5V 20 ID, DRAIN CURRENT (AMPERES) VGS=10 & 15V 8V 5.5V 60 5V 40 4.5V 20 4V 4V 0 0 TJ = +125°C 80 60 40 TJ = +125°C 20 TJ = +25°C TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @