APT80GA60S

APT80GA60B APT80GA60S 600V High Speed PT IGBT -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60S poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT ® TO APT80GA60B D3PAK FEATURES • Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 1 Ratings 600 143 80 240 ±30 625 240A @ 600V -55 to 150 300 Unit V A V W °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 47A VCE = 600V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ = 125°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ Max Unit 2.0 1.9 4.5 2.5 6 250 1000 ±100 V VGE =VCE , IC = 1mA μA nA 6 - 2009 052-6323 Rev C VGS = ±30V Thermal and Mechanical Characteristics Symbol RθJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Min - Typ 5.9 Max 0.2 - Unit °C/W g in·lbf 10 Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6 TJ = 25°C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 47A TJ = 150°C, RG = 4.7Ω4, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 47A RG = 4.7Ω4 TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 47A RG = 4.7Ω4 TJ = +125°C 23 27 158 78 840 751 21 31 194 132 1275 1112 240 APT80GA60B_S Min Typ 6390 580 63 230 40 78 nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit A ns μJ ns μJ 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6323 Rev C 6 - 2009 Typical Performance Curves 150 V GE APT80GA60B_S 300 275 TJ= 150°C IC, COLLECTOR CURRENT (A) 250 225 200 175 150 125 100 75 50 25 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) I = 47A C T = 25°C J = 15V TJ= 125°C TJ= 55°C 15V 12V 13V IC, COLLECTOR CURRENT (A) 125 100 75 50 25 0 TJ= 25°C 10V 9V 8V 360 320 IC, COLLECTOR CURRENT (A) 280 240 200 160 120 80 40 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST