APT84M50B2

APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT84M50B2 APT84M50L D Single die MOSFET G S FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 84 53 270 ±30 1845 42 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 MicrosemiWebsite-http://www.microsemi.com N·m -55 0.11 150 °C 300 Rev D 5 -2009 050-8095 Min Typ Max 1135 0.11 Unit W °C/W oz g in·lbf Static Characteristics Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VDS = 500V VGS = 0V TJ = 25°C TJ = 125°C APT84M50B2_L Typ 0.60 0.055 4 -10 Max Unit V V/°C Ω V mV/°C µA nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 500 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 3 0.065 5 100 500 ±100 VGS = ±30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 42A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 65 13500 185 1455 845 Max Unit S pF VGS = 0V, VDS = 0V to 333V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 42A, VDS = 250V Resistive Switching VDD = 333V, ID = 42A RG = 2.2Ω 6 , VGG = 15V 425 340 75 155 60 70 155 50 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 84 Unit G S A 270 1.0 720 20 8 V ns µC V/ns ISD = 42A, TJ = 25°C, VGS = 0V ISD = 42A 3 diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 42A, di/dt ≤1000A/µs, VDD = 100V, TJ = 125°C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 2.08mH, RG = 25Ω, IAS = 42A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10. Rev D 5 -2009 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-8095 APT84M50B2_L 350 V GS 160 = 10V T = 125°C J V GS = 7,8 & 10V 300 ID, DRAIN CURRENT (A) 250 200 TJ = 25°C 140 ID, DRIAN CURRENT (A) TJ = -55°C 120 100 80 60 40 5V 6V 150 100 TJ = 150°C 50 TJ = 125°C 20 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 0 0 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5 NORMALIZED TO VGS = 10V @ 42A 280 VDS> ID(ON) x RDS(ON) MAX. 240 ID, DRAIN CURRENT (A) 200 250µSEC. PULSE TEST @