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APT8DQ60K

APT8DQ60K

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    APT8DQ60K - ULTRAFAST SOFT RECOVERY RECTIFIER DIODE - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
APT8DQ60K 数据手册
600V 8A APT8DQ60K APT8DQ60SA APT8DQ60KG* APT8DQ60SAG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching TO-220 D2PAK 1 2 (SA) 1 • Cooler Operation • Popular TO-220 Package or Surface Mount D2 PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated • Increased System Power Density 2 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT8DQ60K_SA(G) UNIT 600 Volts Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 8 16 110 20 -55 to 175 300 mJ °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 8A VF Forward Voltage IF = 16A IF = 8A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 2.0 2.5 1.5 2.4 Volts 25 500 16 Microsemi Website - http://www.microsemi.com 053-4210 Rev F pF 7-2006 µA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 8A, diF/dt = -1000A/µs VR = 400V, TC = 125°C IF = 8A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 8A, diF/dt = -200A/µs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT8DQ60K_SA(G) TYP MAX UNIT ns nC 14 19 17 2 90 160 3 43 250 11 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g 2.7 0.07 1.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 3.0 Z JC, THERMAL IMPEDANCE (°C/W) θ 2.5 2.0 1.5 1.0 0.5 0 10-5 D = 0.9 0.7 0.5 0.3 0.1 0.05 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) TC (°C) 1.93 0.773 7-2006 Dissipated Power (Watts) 0.00078 0.0246 053-4210 Rev F ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 30 25 trr, REVERSE RECOVERY TIME (ns) 120 100 80 60 40 20 0 APT8DQ60K_SA(G) T = 125°C J V = 400V R 16A IF, FORWARD CURRENT (A) TJ = 175°C 20 15 8A 4A TJ = 125°C 10 5 0 TJ = 25°C TJ = -55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 400 Qrr, REVERSE RECOVERY CHARGE (nC) 350 300 250 200 150 100 50 0 T = 125°C J V = 400V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 14 12 10 8 6 4 T = 125°C J V = 400V R 16A 16A 8A 4A 8A 4A 2 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to X000A/µs) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 IRRM Qrr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 20 18 16 14 IF(AV) (A) 12 10 8 6 4 2 Duty cycle = 0.5 T = 175°C J trr trr 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 60 CJ, JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1 053-4210 Rev F 7-2006 APT8DQ60K_SA(G) Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT6038BLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (K) Package Outline e3 100% Sn 10.66 (.420) 9.66 (.380) TO-263 D2 (SA) Package Outline e3 100% Sn 4.45 (.175) 4.57 (.180) 1.27 (.050) 1.32 (.052) 10.06 (.396) 10.31(.406) Cathode (Heat Sink) 1.39 (.055) 0.51 (.020) Cathode 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230) 1.40 (.055) 1.65 (.065) 7.54 (.297) 7.68 (.303) 12.192 (.480) 9.912 (.390) 3.42 (.135) 2.54 (.100) 4.08 (.161) Dia. 3.54 (.139) 0.050 (.002) 0.330 (.013) 0.432 (.017) 8.51 (.335) 8.76(.345) 6.02 (.237) 6.17 (.243) 7-2006 0.080 (2.032) MAX. 14.73 (.580) 12.70 (.500) 3.683 (.145) MAX. 0.000 (.000) 0.254 (.010) 2.62 (.103) 2.72 (.107) 1.22 (.048) 1.32 (.052) {3 Plcs.} 0.762 (.030) 0.864 (.034) {2 Plcs.} 2.54 (.100) BSC {2 Plcs.} 3.68 (.145) 6.27 (.247) (Base of Lead) 0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140) Cathode Anode Heat Sink (Cathode) and Leads are Plated 053-4210 Rev F 1.01 (.040) 2-Plcs. .83 (.033) 5.33 (.210) 4.83 (.190) 1.77 (.070) 2-Plcs. 1.15 (.045) Anode Cathode Dimensions in Millimeters (Inches) Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT8DQ60K
物料型号: - APT8DQ60K、APT8DQ60SA、APT8DQ60KG、APT8DQ60SAG。标注有的表示符合RoHS且无铅端子镀层。

器件简介: - 超快软恢复整流二极管,具有抗并联二极管、开关电源、逆变器、超快恢复时间、软恢复特性等特点。常用于电机控制器、变频器、逆变器中,作为自由轮二极管和钳位二极管使用,具有低正向电压和低漏电流特性,适用于功率因数校正(PFC)。

引脚分配: - 1 - 阴极(Cathode) - 2 - 阳极(Anode) - 背壳 - 阴极(Back of Case - Cathode)

参数特性: - 最大直流反向电压(VR):600V - 最大平均正向电流(F(AV)):8A(T = 128°C, 占空比 = 0.5) - 正向峰值电流(FSM):110A(T = 45°C, 8.3ms) - 雪崩能量(EAVL):20mJ(1A, 40mH) - 工作和储存温度范围(TJTSTG):-55至175°C

功能详解: - 低损耗、低噪声开关、更冷却的操作、更高可靠性系统、增加系统功率。

应用信息: - 产品适用于开关电源、逆变器、电机控制器、变频器、功率因数校正等应用。

封装信息: - 流行的TO-220封装或表面贴装D2 PAK封装。
APT8DQ60K 价格&库存

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