APT94N60L2C3

APT94N60L2C3 600V 94A 0.035Ω Super Junction MOSFET C OLMOS O Power Semiconductors TO-264 Max • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-264 Max Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT94N60L2C3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 600 94 282 ±20 ±30 833 6.67 -55 to 150 300 50 20 1 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.03 1.0 0.035 50 500 ±200 2.10 3 3.9 (VGS = 10V, 60A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.4mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" ™ 050-7148 Rev D 6-2006 DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT94N60L2C3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 94A @ 25°C RESISTIVE SWITCHING VGS = 13V VDD = 380V ID = 94A @ 125°C RG = 0.9Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 94A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 94A, RG = 5Ω MIN TYP MAX UNIT 13600 4400 290 505 48 240 18 27 110 8 2040 3515 2920 3970 MIN TYP MAX UNIT Amps Volts ns µC V/ns pF 640 nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 165 12 ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 94 282 1 861 46 6 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - 94A) 1.2 Reverse Recovery Time (IS = -94A, dl S/dt = 100A/µs, VR = 350V) Reverse Recovery Charge (IS = -94A, dl S /dt = 100A/µs, VR = 350V) Peak Diode Recovery dv/ dt 5 Q THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.15 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID94A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.14 0.12 0.9 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7148 Rev D 6-2006 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 200 180 ID, DRAIN CURRENT (AMPERES) APT94N60L2C3 VGS =15 &10V 6V & 6.5V 5.5V 160 140 120 100 80 60 40 20 0 TJ ( C) 0.0618 Dissipated Power (Watts) 0.0230 0.436 TC ( C) 0.0885 5V ZEXT 4.5V 4V ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80 NORMALIZED TO = 10V @ 47A V GS 200 180 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @