APT94N65B2C3

650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Power Semiconductors Super Junction MOSFET T-MaxTM • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Dual die (parallel) • Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv All Ratings per die: TC = 25°C unless otherwise specified. APT94N65B2C3(G) 650 1 Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C UNIT Volts 94 60 282 20 833 -55 to 150 260 50 7 Volts Watts °C V/ns Amps mJ Amps Continuous Drain Current @ TC = 100°C Pulsed Drain Current 2 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) Avalanche Current 2 3 /dt IAR EAR EAS Repetitive Avalanche Energy ( Id = 3.5A, Vdd = 50V ) ( Id = 3.5A, Vdd = 50V ) 1 1800 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) Drain-Source On-State Resistance 3 MIN 650 TYP MAX UNIT Volts (VGS = 10V, ID = 47A) 0.03 1.0 100 0.035 50 Ohms μA nA Volts 2-2011 050-8069 Rev C Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.8mA) 2.1 ±200 3 3.9 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 APT94N65B2C3(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 94A @ 25°C INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 94A @ 25°C RG = 4.3Ω 5 MIN TYP MAX UNIT pF 13940 5200 229 580 72 234 32 59 498 167 2684 4448 3391 5082 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 5 nC ns INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3Ω μJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr IRRM Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 2 4 MIN TYP MAX 94 282 UNIT Amps Volts ns μC Amps (Body Diode) (VGS = 0V, IS = -94A) Tj = 25°C Tj = 25°C Tj = 25°C 0.9 960 1271 31 43 58 56 1.2 Reverse Recovery Time (IS = -94A, di/dt = 100A/ μs) Reverse Recovery Charge (IS = -94A, di/dt = 100A/ μs) Peak Recovery Current (IS = -94A, di/dt = 100A/ μs) THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.15 31 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f . Pulse width tp limited by Tj max. 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 4 See MIL-STD-750 Method 3471 5 Eon includes diode reverse recovery. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 10-3 0.5 Note: D = 0.9 0.7 PDM 2-2011 0.3 t1 t2 050-8069 Rev C Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-2 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Typical Performance Curves 250 10 &15V 6.5V 160 140 200 IC, DRAIN CURRENT (A) 6V ID, DRAIN CURRENT (A) 120 100 80 60 40 TJ= 25°C 20 0 0 TJ= 125°C 1 2 3 4 5 VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @