APT97N65LC6

APT97N65B2C6 APT97N65LC6 650V 97A 0.041Ω APT97N65B2C6 C OLMOS O Power Semiconductors Super Junction MOSFET T-Max® • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated TO-264 APT97N65LC6 D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 All Ratings per die: TC = 25°C unless otherwise specified. APT97N65B2_LC6 650 (assuming Rdson max = 0.041Ω) UNIT Volts 97 62 291 ±20 862 -55 - to 150 260 13.4 Volts Watts °C Amps Amps Continuous Drain Current @ TC = 100°C Pulsed Drain Current 2 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 2 3 Repetitive Avalanche Energy ( Id = 13.4A, Vdd = 50V ) ( Id = 13.4A, Vdd = 50V ) 2.96 1954 mJ Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 4 MIN 650 TYP MAX UNIT Volts (VGS = 10V, ID = 48.5A) 0.037 0.041 25 250 ±100 Ohms μA nA 2-2011 050-7212 Rev A Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA) 2.5 3 3.5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 5 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 6 6 APT97N65B2_LC6 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 325V ID = 97A @ 25°C INDUCTIVE SWITCHING VGS = 15V VDD = 433V ID = 97A @ 25°C RG = 2.2Ω INDUCTIVE SWITCHING @ 25°C VDD = 433V, VGS = 15V ID = 97A, RG = 2.2Ω INDUCTIVE SWITCHING @ 125°C VDD = 433V, VGS = 15V ID =97A, RG = 2.2Ω MIN TYP 7650 5045 550 300 50 160 25 60 275 130 2860 3500 4030 3695 μJ ns nC pF MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage dv 2 4 MIN TYP MAX 97 291 UNIT Amps Volts V/ns ns μC Amps (Body Diode) (VGS = 0V, IS = -48.5A) 7 0.9 1.2 50 /dt Peak Diode Recovery /dt Reverse Recovery Time (IS = -97A, di/dt = 100A/ μs) t rr Q rr IRRM Tj = 25°C Tj = 25°C Tj = 25°C 790 19 43 Reverse Recovery Charge (IS = -97A, di/dt = 100A/ μs) Peak Recovery Current (IS = -97A, di/dt = 100A/ μs) THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient 4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% MIN TYP MAX 0.145 40 UNIT °C/W 1 Continuous current limited by package lead temperature. 2 Repetitive Rating: Pulse width limited by maximum junction temperature 5 See MIL-STD-750 Method 3471 3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 7 Maximum 125°C diode commutation speed = di/dt 600A/μs Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.12 0.7 0.10 0.08 0.06 0.04 0.02 0 10 -5 D = 0.9 0.5 Note: 2-2011 PDM 0.3 t1 t2 050-7212 Rev A 0.1 0.05 10 -4 SINGLE PULSE 10 -3 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-2 0.1 1 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Typical Performance Curves 225 200 175 IC, DRAIN CURRENT (A) 150 125 100 75 50 25 0 6.5V 6V 5.5V 5V 4.5V 15V 140 10V 120 ID, DRAIN CURRENT (A) 7V 100 80 60 40 20 0 TJ= 25°C TJ= 125°C 0 VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @