APTC60AM18SCG

APTC60AM18SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q1 G1 OUT S1 Q2 G2 0/VBUS S2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V A V mΩ W A mJ • • G1 S1 VBUS 0/VBUS OUT • S2 G2 Benefits • • • • • Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60AM18SCG – Rev 2 July, 2006 APTC60AM18SCG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 71.5A VGS = VDS, ID = 4 mA VGS = ±20 V, VDS = 0 V 3 Max 100 1000 18 3.9 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 143A Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A R G = 1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2 Ω Min Typ 28 10.2 0.85 1036 116 444 21 30 283 84 1608 3920 2630 4824 Max Unit nF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 350 600 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 31 60 120 500 ns nC www.microsemi.com 2–7 APTC60AM18SCG – Rev 2 July, 2006 Tj = 125°C 120 1.1 1.4 0.9 1.15 V APTC60AM18SCG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 80A Test Conditions VR=600V Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Min 600 Typ 400 800 80 1.6 2.0 112 520 400 Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 Typ Max 0.15 0.46 0.35 150 125 100 5 3.5 280 Max 1600 8000 1.8 2.4 Unit V µA A V nC pF IF = 80A, VR = 300V di/dt =2000A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=15&10V 450 360 270 180 90 0 TJ=125°C TJ=25°C T J=-55°C 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 240 I D, Drain Current (A) I D, DC Drain Current (A) Normalized to VGS =10V @ 71.5A V GS=10V DC Drain Current vs Case Temperature 160 140 120 100 80 60 40 20 0 25 July, 2006 4–7 APTC60AM18SCG – Rev 2 V GS=20V 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60AM18SCG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 143A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) limited by RDSon 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 100 100µs 1 ms 10 Single pulse TJ =150°C TC=25°C 1 10 100 10 ms 1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss 14 12 10 8 6 4 2 0 0 200 400 600 800 Gate Charge (nC) 1000 1200 July, 2006 C, Capacitance (pF) 10000 Coss ID=143A TJ=25°C VDS=120V V DS=300V VDS=480V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–7 APTC60AM18SCG – Rev 2 APTC60AM18SCG 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=1.2Ω T J=125°C L=100µH 100 tr and t f (ns) 250 200 150 100 50 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Current 10 9 8 7 6 5 4 3 2 1 0 0 VDS=400V RG=1.2Ω TJ=125°C L=100µH td(on) VDS=400V RG=1.2Ω TJ=125°C L=100µH tf 80 60 40 tr 20 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Gate Resistance 20 Switching Energy (mJ) V DS =400V ID=143A T J=125°C L=100µH Switching Energy (mJ) E off 15 10 5 0 Eoff Eon E on 40 80 120 160 200 ID, Drain Current (A) 240 0 2.5 5 7.5 10 Gate Resistance (Ohms) 12.5 Operating Frequency vs Drain Current 160 140 Frequency (kHz) I DR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage 1000 T J=150°C 120 100 80 60 40 20 0 30 ZCS 100 TJ=25°C ZVS VDS=400V D=50% RG=1.2Ω T J=125°C T C=75°C Hard switching 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 50 70 90 110 ID, Drain Current (A) 130 www.microsemi.com 6–7 APTC60AM18SCG – Rev 2 APTC60AM18SCG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (°C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 160 I F Forward Current (A) TJ=25°C IR Reverse Current (µA) 1600 1400 1200 1000 800 600 400 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25°C TJ =125°C TJ =75°C TJ =175°C 120 80 40 0 0 0.5 TJ =75°C TJ=175°C TJ =125°C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 3000 C, Capacitance (pF) 2500 2000 1500 1000 500 0 July, 2006 APTC60AM18SCG – Rev 2 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7