APTC60AM35T1G

APTC60AM35T1G Phase leg Super Junction MOSFET Power Module 5 Q1 7 8 Q2 9 10 3 4 NTC 6 11 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration • 1 2 12 • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A V mΩ W A mJ August, 2007 1–6 APTC60AM35T1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC60AM35T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V 3 Max 40 375 35 3.9 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω Min Typ 14 5.13 0.42 518 58 222 21 30 283 84 1340 1960 2192 2412 µJ µJ ns nC Max Unit nF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/µs Tj = 25°C Tj = 25°C 580 46 Min Typ 72 54 Max Unit A 1.2 6 V V/ns ns August, 2007 2–6 APTC60AM35T1G – Rev 0 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C IS ≤ - 72A www.microsemi.com APTC60AM35T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 ID, Drain Current (A) 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 ID, Drain Current (A) ID, DC Drain Current (A) Normalized to VGS=10V @ 36A VGS=10V DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 August, 2007 4–6 APTC60AM35T1G – Rev 0 VGS=20V 25 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60AM35T1G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 72A 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 August, 2007 5–6 APTC60AM35T1G – Rev 0 ID=72A TJ=25°C VDS=120V VDS=300V VDS=480V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com APTC60AM35T1G 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 tr and tf (ns) 80 60 40 20 0 250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VDS=400V RG=2.5Ω TJ=125°C L=100µH td(on) VDS=400V RG=2.5Ω TJ=125°C L=100µH tf tr 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 Switching Energy (mJ) 8 6 4 2 0 VDS=400V ID=72A TJ=125°C L=100µH Switching Energy (mJ) Eoff Eon Eoff Eon 20 40 60 80 100 ID, Drain Current (A) 120 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C Operating Frequency vs Drain Current 140 120 Frequency (kHz) 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS ZVS IDR, Reverse Drain Current (A) 100 TJ=25°C 10 hard switching 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 August, 2007 APTC60AM35T1G – Rev 0 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6