APTC60DAM24T1G

APTC60DAM24T1G Boost chopper Super Junction MOSFET Power Module 5 6 11 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration CR1 3 4 NTC Q2 9 10 1 2 12 • • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A mJ August, 2007 1–6 APTC60DAM24T1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC60DAM24T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 3 Max 350 600 24 3.9 200 Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 95A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Min Typ 14.4 17 300 68 102 21 30 100 45 1350 1040 2200 1270 µJ ns nC Max Unit nF µJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V Test Conditions VR=600V Tj = 25°C Tj = 125°C Tc = 80°C Min 600 Typ Max 100 500 100 1.6 2 1.3 160 220 290 1530 2 V ns nC August, 2007 2–6 APTC60DAM24T1G – Rev 0 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C di/dt =200A/µs www.microsemi.com APTC60DAM24T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.27 0.55 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6.5V 6V 5.5V RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 100 80 60 40 20 0 August, 2007 4–6 APTC60DAM24T1G – Rev 0 25 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60DAM24T1G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 1000000 C, Capacitance (pF) 100000 10000 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Crss Coss Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 95A 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VDS=480V ID=95A TJ=25°C VDS=120V VDS=300V www.microsemi.com 5–6 APTC60DAM24T1G – Rev 0 August, 2007 APTC60DAM24T1G 140 120 td(on) and td(off) (ns) Delay Times vs Current 70 td(off) VDS=400V RG=2.5Ω TJ=125°C L=100µH td(on) Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 80 60 40 20 0 0 tf 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) VDS=400V ID=95A TJ=125°C L=100µH 4 Switching Energy (mJ) 3 VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon 4 3 2 1 0 Eoff Eon 2 1 Eoff 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C Operating Frequency vs Drain Current 300 250 Frequency (kHz) ZVS VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C IDR, Reverse Drain Current (A) 200 150 100 50 0 10 20 hard switching ZCS 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 August, 2007 APTC60DAM24T1G – Rev 0 30 40 50 60 70 ID, Drain Current (A) 80 90 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6