APTC60DDAM70CT1G

APTC60DDAM70CT1G Dual boost chopper Super Junction MOSFET SiC chopper diode VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration • • • Pins 3/4 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A V mΩ W A mJ September, 2009 1–7 APTC60DDAM70CT1G – Rev 0 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC60DDAM70CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V 3 Max 25 250 70 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A RG = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 402 980 657 1206 µJ µJ ns nC Max Unit nF Chopper SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=600V Tj = 25°C Tj = 175°C Tc = 100°C Min 600 Typ 100 200 20 1.6 2 28 130 100 Max 400 2000 1.8 2.4 Unit V µA A September, 2009 2–7 APTC60DDAM70CT1G – Rev 0 Tj = 25°C Tj = 175°C IF = 20A, VR = 300V di/dt =1800A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V V nC pF www.microsemi.com APTC60DDAM70CT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS SiC Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 1.5 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 160 120 80 VGS=15&10V 5V 40 0 0 5 10 15 4.5V 4V 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 1.05 1 0.95 0.9 0 10 20 30 40 50 60 ID, Drain Current (A) ID, DC Drain Current (A) Normalized to VGS=10V @ 19.5A VGS=10V 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 40 35 30 25 20 15 10 September, 2009 4–7 APTC60DDAM70CT1G – Rev 0 VGS=20V 5 0 25 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60DDAM70CT1G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 39A 1000 ID, Drain Current (A) 100 limited by RDSon 100µs 10 Single pulse TJ=150°C TC=25°C 1 10 100 1 ms 10 ms 1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 September, 2009 5–7 APTC60DDAM70CT1G – Rev 0 10000 ID=39A TJ=25°C VDS=120V VDS=300V VDS=480V 1000 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 0 50 100 150 200 Gate Charge (nC) 250 300 www.microsemi.com APTC60DDAM70CT1G 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=5Ω TJ=125°C L=100µH 100 tr and tf (ns) 80 60 40 20 0 250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5 VDS=400V RG=5Ω TJ=125°C L=100µH td(on) VDS=400V RG=5Ω TJ=125°C L=100µH tf tr 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 4 3 2 Eon VDS=400V ID=39A TJ=125°C L=100µH Switching Energy (mJ) 2 1.5 1 Eoff Eoff Eon 0.5 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 1 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 10 15 20 25 30 35 ID, Drain Current (A) 40 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C ZVS ZCS IDR, Reverse Drain Current (A) 140 100 TJ=150°C 10 TJ=25°C Hard switching 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTC60DDAM70CT1G – Rev 0 September, 2009 1 APTC60DDAM70CT1G SiC Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (°C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C Reverse Characteristics 400 IR Reverse Current (µA) 350 300 250 200 150 100 50 0 200 300 400 500 600 700 800 TJ=25°C TJ=125°C TJ=75°C TJ=175°C 40 IF Forward Current (A) 30 20 10 0 0 0.5 TJ=75°C TJ=175°C TJ=125°C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage VR Reverse Voltage (V) 800 C, Capacitance (pF) 600 400 200 0 1 10 100 VR Reverse Voltage 1000 September, 2009 7–7 APTC60DDAM70CT1G – Rev 0 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com