APTC60DHM24T3G

APTC60DHM24T3G Asymmetrical Bridge Super Junction MOSFET Power Module 13 14 Q1 CR3 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives 18 Features 22 19 7 • 23 8 Q4 CR2 4 3 29 15 30 31 32 16 • • • • R1 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 Benefits • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant 31 32 2 3 4 7 8 10 11 12 14 13 • • • • • All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23… Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A mJ August, 2009 1-7 APTC60DHM24T3G – Rev 1 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC60DHM24T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 3 Max 350 600 24 3.9 200 Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 95A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Min Typ 14.4 17 300 68 102 21 30 100 45 1350 1040 2200 1270 µJ ns nC Max Unit nF µJ Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 60A IF = 120A IF = 60A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 600 Typ Max 25 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V 60 1.7 2 1.4 70 140 100 690 2.3 V August, 2009 2-7 APTC60DHM24T3G – Rev 1 Reverse Recovery Time Reverse Recovery Charge IF = 60A VR = 400V di/dt =200A/µs ns nC www.microsemi.com APTC60DHM24T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.85 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6.5V 6V 5.5V RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 100 80 60 40 20 0 25 August, 2009 4-7 APTC60DHM24T3G – Rev 1 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60DHM24T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 1000000 C, Capacitance (pF) 100000 10000 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Crss Coss Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 95A 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) August, 2009 VDS=480V ID=95A TJ=25°C VDS=120V VDS=300V www.microsemi.com 5-7 APTC60DHM24T3G – Rev 1 APTC60DHM24T3G 140 120 td(on) and td(off) (ns) Delay Times vs Current 70 td(off) VDS=400V RG=2.5Ω TJ=125°C L=100µH td(on) Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 80 60 40 20 0 0 tf 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) VDS=400V ID=95A TJ=125°C L=100µH 4 Switching Energy (mJ) 3 VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon 4 3 2 1 0 Eoff Eon 2 1 Eoff 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 250 Frequency (kHz) ZVS IDR, Reverse Drain Current (A) 300 200 150 100 50 0 10 20 hard switching ZCS 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 August, 2009 30 40 50 60 70 ID, Drain Current (A) 80 90 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTC60DHM24T3G – Rev 1 APTC60DHM24T3G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 200 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 160 120 80 TJ=25°C TJ=125°C 175 150 125 100 75 50 0 Trr vs. Current Rate of Charge TJ=125°C VR=400V 120 A 30 A 60 A 40 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ=125°C VR=400V 200 400 600 800 -diF/dt (A/µs) 1000 1200 QRR, Reverse Recovery Charge (µC) IRRM, Reverse Recovery Current (A) 2.0 40 35 30 25 20 15 10 5 0 0 IRRM vs. Current Rate of Charge TJ=125°C VR=400V 120 A 120 A 60 A 30 A 1.5 1.0 60 A 0.5 30 A 0.0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) 200 400 600 800 1000 1200 -diF/dt (A/µs) DC Forward Current vs. Case Temp. 100 80 IF (A) 60 40 Duty Cycle = 0.5 TJ=175°C Capacitance vs. Reverse Voltage 500 C, Capacitance (pF) 400 300 200 100 0 1 10 100 1000 VR, Reverse Voltage (V) 0 25 50 75 100 125 150 175 Case Temperature (°C) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTC60DHM24T3G – Rev 1 August, 2009 20