APTC60DHM45T1G

APTC60DHM45T1G Asymmetrical bridge Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A V mΩ W A mJ August, 2009 1–7 APTC60DHM45T1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC60DHM45T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 40 3 Max 250 500 45 3.9 100 Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 49A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Min Typ 7.2 8.5 150 34 51 21 30 100 45 675 520 1100 635 µJ ns nC Max Unit nF µJ Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 30A IF = 60A IF = 30A Tj = 125°C Tj = 25°C IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Min 600 Typ Max 25 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V 30 1.8 2.2 1.5 25 160 35 480 2.2 V August, 2009 2–7 APTC60DHM45T1G – Rev 0 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTC60DHM45T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 1.2 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6.5V 6V 5.5V RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 50 40 30 20 10 0 August, 2009 4–7 APTC60DHM45T1G – Rev 0 25 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60DHM45T1G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Coss C, Capacitance (pF) 10000 Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 50A 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 20 40 August, 2009 5–7 APTC60DHM45T1G – Rev 0 VDS=480V ID=50A TJ=25°C VDS=120V VDS=300V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 60 80 100 120 140 160 Gate Charge (nC) www.microsemi.com APTC60DHM45T1G 140 120 td(on) and td(off) (ns) Delay Times vs Current 70 td(off) VDS=400V RG=5Ω TJ=125°C L=100µH td(on) Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr VDS=400V RG=5Ω TJ=125°C L=100µH 100 80 60 40 20 0 0 10 20 30 40 50 tf 60 70 80 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 Eoff 0.8 0.4 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 VDS=400V RG=5Ω TJ=125°C L=100µH ID, Drain Current (A) Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 VDS=400V ID=50A TJ=125°C L=100µH Eon Eoff Eon Operating Frequency vs Drain Current ZVS VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 250 Frequency (kHz) ZCS IDR, Reverse Drain Current (A) 300 200 150 100 50 0 5 hard switching 100 TJ=150°C 10 TJ=25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 August, 2009 6–7 APTC60DHM45T1G – Rev 0 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) VSD, Source to Drain Voltage (V) www.microsemi.com APTC60DHM45T1G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (°C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 120 IF, Forward Current (A) 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ=125°C VR=400V TJ=25°C TJ=125°C 175 trr, Reverse Recovery Time (ns) Trr vs. Current Rate of Charge TJ=125°C VR=400V 150 125 100 75 50 0 200 400 600 800 60 A 30 A 15 A 1000 1200 -diF/dt (A/µs) IRRM vs. Current Rate of Charge TJ=125°C VR=400V 60 A 15 A 30 A QRR, Reverse Recovery Charge (µC) 60 A IRRM, Reverse Recovery Current (A) 1.5 30 25 20 15 10 5 0 0 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 200 175 C, Capacitance (pF) 150 125 100 75 50 25 0 1 10 100 1000 VR, Reverse Voltage (V) Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 125 150 175 Case Temperature (°C) Duty Cycle = 0.5 TJ=175°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTC60DHM45T1G – Rev 0 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. August, 2009