APTC60DSKM70T3G

APTC60DSKM70T3G Dual buck chopper VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 Features • 11 18 22 7 19 10 23 CR1 29 8 30 CR2 31 15 32 16 R1 28 27 26 25 23 22 • • • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability • RoHS Compliant 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A July, 2006 Symbol VDSS V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC60DSKM70T3G – Rev 1 Absolute maximum ratings APTC60DSKM70T3G All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IF Maximum Reverse Leakage Current 3 Min Typ 7 2.56 0.21 259 Test Conditions IF = 40A VGE = 0V VF Diode Forward Voltage trr Reverse Recovery Time IF = 40A VR = 300V Qrr Reverse Recovery Charge di/dt =2600A/µs Max Unit µA mΩ V nA nF nC 21 30 84 670 µJ 980 1096 µJ 1206 Min 600 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 40 1.45 1.35 95 115 Tj = 25°C Tj = 125°C 2.6 4 www.microsemi.com ns 283 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5Ω DC Forward Current Unit 111 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω VR=600V Max 25 250 70 3.9 ±100 29 Chopper diode ratings and characteristics IRM 2.1 VGS = 10V VBus = 300V ID = 39A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Tj = 25°C Tj = 125°C Max 250 500 Unit V µA A V ns July, 2006 Symbol µC 2-6 APTC60DSKM70T3G – Rev 1 Electrical Characteristics APTC60DSKM70T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 120 100 80 60 40 T J=125°C 20 TJ=25°C T J=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 VGS=10V VGS=20V 1 7 DC Drain Current vs Case Temperature 40 RDS(on) vs Drain Current 1.1 Normalized to V GS=10V @ 19.5A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 35 30 25 20 15 10 5 0 10 20 30 40 50 60 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 4-6 APTC60DSKM70T3G – Rev 1 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) 160 I D, DC Drain Current (A) ID, Drain Current (A) 200 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) 1.0 0.9 0.8 0.7 100 10 0.6 100 µs limited by RDSon Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 0 100 1000 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 14 ID=39A TJ=25°C 12 10 V DS=120V VDS=300V 8 V DS =480V 6 4 2 0 0 www.microsemi.com 50 100 150 200 Gate Charge (nC) 250 300 July, 2006 VGS(TH), Threshold Voltage (Normalized) 1.2 C, Capacitance (pF) V GS=10V ID= 39A 5-6 APTC60DSKM70T3G – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DSKM70T3G APTC60DSKM70T3G Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=5Ω TJ=125°C L=100µH 200 150 100 50 0 10 20 30 40 50 80 60 40 tr 60 0 70 0 10 ID, Drain Current (A) Switching Energy (mJ) 50 60 70 Eon 1 Eoff VDS=400V ID=39A T J=125°C L=100µH 4 3 Eoff Eon 2 1 0 10 20 30 40 50 60 ID, Drain Current (A) 70 0 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current I DR, Reverse Drain Current (A) 140 120 100 80 ZVS 60 hard V DS =400V switching D=50% RG =5Ω T J=125°C T C=75°C 40 20 0 5 10 ZCS 15 20 25 30 ID, Drain Current (A) 5 10 15 20 25 30 35 40 45 50 T J=150°C 100 TJ=25°C 10 1 0.3 35 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 July, 2006 0 APTC60DSKM70T3G – Rev 1 Switching Energy (mJ) Eoff 0 Frequency (kHz) 40 Switching Energy vs Gate Resistance 1.5 0.5 30 5 VDS=400V RG=5Ω TJ=125°C L=100µH 2 20 ID, Drain Current (A) Switching Energy vs Current 2.5 tf 20 td(on) 0 VDS=400V RG=5Ω T J=125°C L=100µH 100 tr and t f (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120