APTC60HM70SCTG

APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies CR1A CR3A Q1 CR1B CR3B Q3 Features • G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration • • • • OUT2 G3 S3 G4 S4 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTC60HM70SCTG – Rev 3 Benefits • Outstanding performance at high frequency operation OUT1 0/VBUS VBUS • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for S1 NTC2 S2 G1 NTC1 G2 easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 39 ID Continuous Drain Current A Tc = 80°C 29 IDM Pulsed Drain current 160 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 70 mΩ PD Maximum Power Dissipation Tc = 25°C 250 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800 July, 2006 APTC60HM70SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0 V 3 Max 25 250 70 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 402 980 658 1206 Max Unit nF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs Min 200 Tj = 25°C Tj = 125°C Tc = 85°C Typ Max 250 500 Unit V µA A VR=200V trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 33 150 ns nC www.microsemi.com 2–8 APTC60HM70SCTG – Rev 3 July, 2006 Tj = 125°C 30 1.1 1.4 0.9 1.15 V APTC60HM70SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 300V di/dt =800A/µs f = 1 MHz, VR = 200V VR=600V f = 1MHz, VR = 400V Min 600 Typ 100 200 20 1.6 2.0 28 130 100 Max 400 2000 1.8 2.4 Unit V µA A V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode Min Typ P arallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 160 120 80 VGS=15&10V 5V 40 0 0 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance 1.1 I D, DC Drain Current (A) 60 1.05 1 0.95 0.9 0 10 20 30 40 50 I D, Drain Current (A) Normalized to V GS=10V @ 19.5A VGS=10V DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 July, 2006 5–8 APTC60HM70SCTG – Rev 3 VGS=20V 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60HM70SCTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 39A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 100 limited by RDSon 100µs 10 Single pulse TJ=150°C TC=25°C 1 10 100 1 ms 10 ms 1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 July, 2006 10000 ID=39A TJ=25°C V DS=120V VDS=300V V DS =480V 1000 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 6–8 APTC60HM70SCTG – Rev 3 APTC60HM70SCTG 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=5Ω T J=125°C L=100µH 100 tr and t f (ns) 250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5 Switching Energy (mJ) V DS=400V R G=5Ω T J=125°C L=100µH td(on) VDS=400V RG=5Ω TJ=125°C L=100µH tf 80 60 40 20 0 0 tr 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 4 3 2 E on V DS =400V ID=39A T J=125°C L=100µH Switching Energy (mJ) 2 1.5 1 E off Eoff Eon 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 1 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 120 Frequency (kHz) I DR, Reverse Drain Current (A) 140 ZCS 100 80 60 40 20 0 5 10 15 20 25 30 ID, Drain Current (A) 35 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C ZVS 100 T J=150°C 10 TJ=25°C Hard switching 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 www.microsemi.com 7–8 APTC60HM70SCTG – Rev 3 APTC60HM70SCTG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (°C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C Reverse Characteristics 40 I F Forward Current (A) 400 IR Reverse Current (µA) 35 30 25 20 15 10 5 0 0 0.5 1 350 300 250 200 150 100 50 0 200 300 T J=175°C T J=75°C T J=175°C TJ=125°C T J=125°C T J=75°C T J=25°C 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 400 500 600 700 VR Reverse Voltage (V) 800 800 700 C, Capacitance (pF) 600 500 400 300 200 100 0 July, 2006 APTC60HM70SCTG – Rev 3 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8