APTC60HM70T3G

APTC60HM70T3G Full - Bridge Super Junction MOSFET VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 11 22 19 Q2 23 8 Q4 7 10 Power Module 13 14 Q1 Q3 18 Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 26 4 3 29 15 30 31 R1 32 16 27 • • • • 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC60HM70T3G– Rev 1 Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A V mΩ W A July, 2006 APTC60HM70T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0 V 3 Max 25 250 70 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ 39 29 Max Unit A VGS = 0 V, IS = - 39A IS = - 39A VR = 350V diS/dt = 100A/µs Tj = 25°C Tj = 25°C 580 23 1.2 6 V V/ns ns µC www.microsemi.com 2-6 APTC60HM70T3G– Rev 1 July, 2006 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 39A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C APTC60HM70T3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 160 120 80 VGS =15&10V 5V 40 0 0 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 10 20 30 40 50 60 I D, Drain Current (A) I D, DC Drain Current (A) Normalized to V GS=10V @ 19.5A VGS=10V DC Drain Current vs Case Temperature 40 35 30 25 20 15 10 5 0 25 July, 2006 4-6 APTC60HM70T3G– Rev 1 VGS=20V 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTC60HM70T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 39A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 10 100 1 ms 10 ms 1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 ID=39A TJ=25°C V DS=120V VDS=300V V DS =480V 10000 Ciss Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTC60HM70T3G– Rev 1 July, 2006 APTC60HM70T3G 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=5Ω T J=125°C L=100µH 100 tr and t f (ns) 250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH td(on) VDS=400V RG=5Ω TJ=125°C L=100µH tf 80 60 40 20 0 0 tr 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 4 3 2 1 0 VDS=400V ID=39A T J=125°C L=100µH Switching Energy (mJ) 2 1.5 Eoff Eon Eoff 1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 Eon Eoff 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Operating Frequency vs Drain Current 120 Frequency (kHz) I DR, Reverse Drain Current (A) 140 Source to Drain Diode Forward Voltage 1000 100 80 60 40 20 0 5 hard V DS =400V switching ZVS 100 T J=150°C D=50% RG =5Ω T J=125°C T C=75°C 10 TJ=25°C ZCS 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 APTC60HM70T3G– Rev 1 10 15 20 25 30 ID, Drain Current (A) 35 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6