APTC60TAM35PG

APTC60TAM35PG Triple phase leg Super Junction MOSFET VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control W Power Module VBUS1 VBUS2 VBUS3 G1 G3 G5 S1 U S3 V S5 Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 • • • These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-6 APTC60TAM35P G– Rev 1 Benefits • Outstanding performance at high frequency operation VBUS 1 VBUS 2 VBUS 3 • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance G1 G3 G5 • Solderable terminals both for power and signal for S3 S1 S5 0/VBUS 1 0/VBUS 2 0/VBUS 3 easy PCB mounting S2 S4 S6 • Very low (12mm) profile G2 G4 G6 • Each leg can be easily paralleled to achieve a phase leg of three times the current capability U V W • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 72 ID Continuous Drain Current A Tc = 80°C 54 IDM Pulsed Drain current 200 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 35 mΩ PD Maximum Power Dissipation Tc = 25°C 416 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800 July, 2006 APTC60TAM35PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0 V 3 Max 40 375 35 3.9 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Ω Min Typ 14 5.13 0.42 518 58 222 21 30 283 84 1340 1960 2192 2412 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ 72 54 Max Unit A VGS = 0 V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/µs Tj = 25°C Tj = 25°C 580 46 1.2 6 V V/ns ns µC July, 2006 2-6 APTC60TAM35P G– Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 72A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTC60TAM35PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 I D, Drain Current (A) 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 I D, Drain Current (A) I D, DC Drain Current (A) Normalized to VGS=10V @ 36A VGS=10V DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 4-6 APTC60TAM35P G– Rev 1 VGS =20V www.microsemi.com APTC60TAM35PG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 72A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 10 100 1 ms 10 ms 1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 ID=72A TJ=25°C V DS=120V VDS=300V V DS =480V 10000 Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTC60TAM35P G– Rev 1 July, 2006 APTC60TAM35PG 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=2.5Ω T J=125°C L=100µH 100 tr and t f (ns) 250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 Switching Energy (mJ) VDS=400V RG=2.5Ω TJ=125°C L=100µH td(on) VDS=400V RG=2.5Ω TJ=125°C L=100µH tf 80 60 40 20 0 0 tr 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 8 6 4 2 0 VDS=400V ID=72A T J=125°C L=100µH Switching Energy (mJ) Eoff Eon Eoff Eon 20 40 60 80 100 ID, Drain Current (A) 120 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 T J=150°C Operating Frequency vs Drain Current 140 120 Frequency (kHz) ZCS ZVS 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C I DR, Reverse Drain Current (A) 100 TJ=25°C 10 hard switching 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 APTC60TAM35P G– Rev 1 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6