APTC80A15SCTG

APTC80A15SCTG Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module NT C2 VBUS Q1 VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • G1 OUT S1 Q2 • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated G2 0/VBU S S2 NT C1 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration • • • • These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC80A15SCTG – Rev 2 Benefits • Outstanding performance at high frequency operation OUT 0/ VBUS • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance S1 NTC2 S2 • Solderable terminals both for power and signal for G1 G2 NTC1 easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 800 V Tc = 25°C 28 ID Continuous Drain Current A Tc = 80°C 21 IDM Pulsed Drain current 112 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 150 mΩ PD Maximum Power Dissipation Tc = 25°C 277 W IAR Avalanche current (repetitive and non repetitive) 17 A EAR Repetitive Avalanche Energy 0.5 mJ EAS Single Pulse Avalanche Energy 670 VBUS OUT July, 2006 APTC80A15SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Typ Tj = 25°C Tj = 125°C 2.1 3 VGS = 10V, ID = 14A VGS = VDS, ID = 2 mA VGS = ±20 V, VDS = 0 V Max 50 375 150 3.9 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Ω Min Typ 4507 2092 108 180 22 90 10 13 83 35 291 278 510 342 Max Unit pF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 250 500 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 33 150 ns nC www.microsemi.com 2–7 APTC80A15SCTG – Rev 2 July, 2006 Tj = 125°C 30 1.1 1.4 0.9 1.15 V APTC80A15SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 15A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Min 1200 Typ 150 300 15 1.6 2.6 42 135 99 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.45 1.2 1.0 150 125 100 4.7 160 Typ 50 3952 Max Max 600 3000 1.8 3.0 Unit V µA A V nC pF IF = 15A, VR = 600V di/dt =1000A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Unit °C/W P arallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle T J=-55°C VGS =15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 80 60 40 20 T J=125°C TJ =25°C T J=125°C TJ =-55°C 0 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 30 I D, DC Drain Current (A) Normalized to V GS=10V @ 14A VGS=10V 25 20 15 10 5 0 25 50 75 100 125 150 July, 2006 4–7 APTC80A15SCTG – Rev 2 TC, Case Temperature (°C) www.microsemi.com APTC80A15SCTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 14A 100 limited by RDSo n 100µs 10 Single pulse TJ =150°C TC=25°C 1 1ms 1 100ms 0 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) July, 2006 VDS=640V ID=28A T J=25°C V DS =160V VDS=400V 10000 Ciss Coss Crss 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–7 APTC80A15SCTG – Rev 2 APTC80A15SCTG Delay Times vs Current Rise and Fall times vs Current 100 t d(off) td(on) and td(off) (ns) 50 40 t r and tf (ns) V DS=533V RG=2.5Ω T J=125°C L=100µH tf 80 60 40 20 0 10 20 30 40 I D, Drain Current (A) Switching Energy vs Current 30 20 10 0 VDS=533V RG=2.5Ω T J=125°C L=100µH tr t d(on) 50 10 20 30 40 I D, Drain Current (A) 50 Switching Energy vs Gate Resistance 900 750 Eon and Eoff (µJ) Switching Energy (µJ) 600 450 300 150 0 VDS=533V RG=2.5Ω T J=125°C L=100µH 2500 Eon 2000 1500 1000 500 V DS=533V ID=28A T J=125°C L=100µH Eoff Eoff Eon Eoff 0 10 20 30 40 ID, Drain Current (A) 50 0 5 10 15 20 Gate Resistance (Ohms) 25 Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 6 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) VDS=533V D=50% RG=2.5Ω T J=125°C T J=75°C ZCS ZVS IDR , Reverse Drain Current (A) 400 Source to Drain Diode Forward Voltage 1000 100 T J=150°C 10 T J=25°C Hard Switching 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) July, 2006 www.microsemi.com 6–7 APTC80A15SCTG – Rev 2 APTC80A15SCTG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (°C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C Reverse Characteristics 30 I F Forward Current (A) 600 IR Reverse Current (µA) 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage T J=175°C T J=125°C TJ=75°C 450 300 150 0 400 T J=75°C T J=125°C T J=175°C T J=25°C 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) 1200 C, Capacitance (pF) 1000 800 600 400 200 0 1 July, 2006 APTC80A15SCTG – Rev 2 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7