APTC80DDA29T3G

APTC80DDA29T3G Dual Boost chopper Super Junction MOSFET VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Q2 4 Power Module 13 14 CR1 22 7 CR2 23 Q1 26 8 27 29 15 30 31 R1 32 16 3 • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC80DDA29T3G – Rev 1 July, 2006 Max ratings 800 15 11 60 ±30 290 156 17 0.5 670 Unit V A V mΩ W A APTC80DDA29T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Typ Tj = 25°C Tj = 125°C 2.1 3 VGS = 10V, ID = 7.5A VGS = VDS, ID = 1 mA VGS = ±20 V, VDS = 0 V Max 25 250 290 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 15A Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, R G = 5 Ω Min Typ 2254 1046 54 90 11 45 10 13 83 35 243 139 425 171 Max Unit pF nC ns µJ µJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=1000V Tj = 25°C Tj = 125°C Tc = 65°C Min 1000 Typ Max 250 500 Unit V µA A IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt=200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 30 1.9 2.2 1.7 290 390 670 2350 2.3 V Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTC80DDA29T3G – Rev 1 July, 2006 trr Reverse Recovery Time ns APTC80DDA29T3G Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode Min Typ Max 0.8 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ =-55°C VGS =15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 40 30 20 10 0 0 TJ =125°C TJ =25°C TJ =125°C T J=-55°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 16 I D, DC Drain Current (A) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 APTC80DDA29T3G – Rev 1 July, 2006 Normalized to V GS=10V @ 7.5A TC, Case Temperature (°C) www.microsemi.com 4–6 APTC80DDA29T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 10000 Ciss C, Capacitance (pF) 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 limited by RDSon 100µs ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 7.5A 10 1ms 1 Single pulse TJ =150°C TC=25°C 1 100ms 0 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 Gate Charge (nC) APTC80DDA29T3G – Rev 1 July, 2006 VDS=640V ID=15A T J=25°C V DS =160V VDS=400V www.microsemi.com 5–6 APTC80DDA29T3G Delay Times vs Current Rise and Fall times vs Current 100 td(off) 50 40 t r and tf (ns) V DS=533V RG=5Ω T J=125°C L=100µH td(on) and td(off) (ns) tf 80 60 40 20 0 5 10 15 20 I D, Drain Current (A) Switching Energy vs Current 30 20 10 0 VDS=533V RG=5Ω T J=125°C L=100µH tr td(on) 25 5 10 15 20 I D, Drain Current (A) 25 Switching Energy vs Gate Resistance 800 700 Eon and Eoff (µJ) Switching Energy (µJ) 600 500 400 300 200 100 0 5 VDS=533V RG=5Ω TJ=125°C L=100µH 1250 Eon 1000 750 500 250 0 VDS=533V ID=15A T J=125°C L=100µH Eoff Eon Eoff Eoff 10 15 20 ID, Drain Current (A) 25 0 10 20 30 40 Gate Resistance (Ohms) 50 Operating Frequency vs Drain Current 350 Frequency (kHz) ZVS ZCS 300 250 200 150 100 50 0 4 6 Hard switching VDS=533V D=50% RG=5Ω T J=125°C T C=75°C IDR, Reverse Drain Current (A) 400 Source to Drain Diode Forward Voltage 1000 100 TJ =150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 V SD, Source to Drain Voltage (V) APTC80DDA29T3G – Rev 1 July, 2006 8 10 12 ID, Drain Current (A) 14 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6