APTC80H15T3G

APTC80H15T3G Full - Bridge Super Junction MOSFET VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 11 22 19 Q2 23 8 Q4 7 10 Power Module 13 14 Q1 Q3 18 Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration 26 4 3 29 15 30 31 R1 32 16 27 • • • • 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Max ratings 800 28 21 110 ±30 150 277 17 0.5 670 Unit V A V mΩ W A mJ July, 2006 1–6 APTC80H15T3G – Rev 2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC80H15T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Typ Tj = 25°C Tj = 125°C 2.1 3 VGS = 10V, ID = 14A VGS = VDS, ID = 2 mA VGS = ±20 V, VDS = 0 V Max 50 375 150 3.9 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Ω Min Typ 4507 2092 108 180 22 90 10 13 83 35 486 278 850 342 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ 28 21 Max Unit A VGS = 0 V, IS = - 28A IS = - 28A VR = 400V diS/dt = 200A/µs Tj = 25°C Tj = 25°C 550 30 1.2 6 V V/ns ns µC www.microsemi.com 2–6 APTC80H15T3G – Rev 2 July, 2006 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 28A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C APTC80H15T3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 80 60 40 20 0 0 TJ =25°C TJ =125°C T J=-55°C 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 30 ID, DC Drain Current (A) Normalized to V GS=10V @ 14A VGS=10V 25 20 15 10 5 0 25 50 75 100 125 150 July, 2006 TC, Case Temperature (°C) www.microsemi.com 4–6 APTC80H15T3G – Rev 2 APTC80H15T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 14A 100 limited by RDSo n 100µs 10 100ms 1ms 1 Single pulse TJ =150°C TC=25°C 1 10 100 1000 VDS, Drain to Source Voltage (V) 0 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) July, 2006 VDS=640V ID=28A T J=25°C V DS =160V VDS=400V 10000 Ciss 1000 Coss Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTC80H15T3G – Rev 2 APTC80H15T3G Delay Times vs Current Rise and Fall times vs Current 100 t d(off) td(on) and td(off) (ns) 50 40 t r and tf (ns) V DS=533V RG=2.5Ω T J=125°C L=100µH tf 80 60 40 20 0 10 20 30 40 I D, Drain Current (A) Switching Energy vs Current 30 20 10 0 VDS=533V RG=2.5Ω T J=125°C L=100µH tr t d(on) 50 10 20 30 40 I D, Drain Current (A) 50 Switching Energy vs Gate Resistance 1500 1200 900 600 300 0 Switching Energy (µJ) Eon and Eoff (µJ) VDS=533V RG=2.5Ω TJ=125°C L=100µH 2500 Eon 2000 1500 1000 500 0 V DS=533V ID=28A T J=125°C L=100µH Eon Eoff Eoff Eon 10 20 30 40 I D, Drain Current (A) 50 0 5 10 15 20 Gate Resistance (Ohms) 25 Operating Frequency vs Drain Current 350 Frequency (kHz) ZVS 300 250 200 150 100 50 0 6 Hard switching ZCS VDS=533V D=50% RG=2.5Ω TJ=125°C TC=75°C IDR , Reverse Drain Current (A) 400 Source to Drain Diode Forward Voltage 1000 100 T J=150°C 10 T J=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) July, 2006 APTC80H15T3G – Rev 2 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6