APTC80H29SCTG

APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • G3 S3 Q1 CR1B CR3B Q3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration • • • • G3 S3 G4 S4 OUT2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC80H29SCTG – Rev 2 July, 2006 Benefits • Outstanding performance at high frequency operation 0/VBUS VBUS • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance S1 NTC2 S2 • Solderable terminals both for power and signal for G1 NTC1 G2 easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 800 V Tc = 25°C 15 ID Continuous Drain Current A Tc = 80°C 11 IDM Pulsed Drain current 60 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 290 mΩ PD Maximum Power Dissipation Tc = 25°C 156 W IAR Avalanche current (repetitive and non repetitive) 17 A EAR Repetitive Avalanche Energy 0.5 mJ EAS Single Pulse Avalanche Energy 670 OUT1 APTC80H29SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 7.5A VGS = VDS, ID = 1 mA VGS = ±20 V, VDS = 0 V 3 Max 25 250 290 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 15A Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, R G = 5 Ω Min Typ 2254 1046 54 91 12 46 10 13 83 35 146 139 255 171 Max Unit pF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 30A IF = 60A IF = 30A Tj = 125°C Tj = 25°C IF = 30A VR = 133V di/dt = 200A/µs Min 200 Tj = 25°C Tj = 125°C Tc = 85°C Typ Max 250 500 Unit V µA A 0.9 24 48 33 150 ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 125°C Tj = 25°C Tj = 125°C www.microsemi.com 2–7 APTC80H29SCTG – Rev 2 July, 2006 30 1.1 1.4 1.15 V APTC80H29SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 5 A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Min 1200 Typ 50 100 5 1.6 2.6 14 45 33 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.8 1.2 2.5 150 125 100 4.7 160 Typ 50 3952 Max Max 200 1000 1.8 3.0 Unit V µA A V nC pF IF = 5 A, VR = 600V di/dt =500A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Unit °C/W P arallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle T J=-55°C VGS=15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 40 30 20 10 0 0 TJ =125°C TJ =25°C TJ =125°C T J=-55°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 16 I D, DC Drain Current (A) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 APTC80H29SCTG – Rev 2 July, 2006 Normalized to V GS=10V @ 7.5A TC, Case Temperature (°C) www.microsemi.com 4–7 APTC80H29SCTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 10000 Ciss ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 7.5A 100 limited by RDSon 10 100µs 1ms 1 Single pulse TJ =150°C TC=25°C 1 100ms 0 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 Gate Charge (nC) APTC80H29SCTG – Rev 2 July, 2006 VDS=640V ID=15A T J=25°C V DS =160V VDS=400V C, Capacitance (pF) 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–7 APTC80H29SCTG Delay Times vs Current Rise and Fall times vs Current 100 td(off) 50 40 tr and t f (ns) V DS=533V RG=5Ω T J=125°C L=100µH td(on) and td(off) (ns) tf 80 60 40 20 0 5 10 15 20 I D, Drain Current (A) Switching Energy vs Current 30 20 10 0 VDS=533V RG=5Ω T J=125°C L=100µH tr td(on) 25 5 10 15 20 I D, Drain Current (A) 25 Switching Energy vs Gate Resistance 500 Eon and Eoff (µJ) 400 300 200 100 0 5 Switching Energy (µJ) VDS=533V RG=5Ω TJ=125°C L=100µH 1250 Eon 1000 750 500 250 V DS=533V ID=15A T J=125°C L=100µH Eoff Eoff Eon Eoff 0 10 15 20 ID, Drain Current (A) 25 0 10 20 30 40 Gate Resistance (Ohms) 50 Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 4 V DS=533V D=50% R G=5Ω T J=125°C T C=75°C ZCS ZVS IDR , Reverse Drain Current (A) 400 Source to Drain Diode Forward Voltage 1000 100 TJ =150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 V SD, Source to Drain Voltage (V) APTC80H29SCTG – Rev 2 July, 2006 Hard Switching 6 8 10 12 ID, Drain Current (A) 14 www.microsemi.com 6–7 APTC80H29SCTG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 Thermal Impedance (°C/W) 2.5 2 1.5 1 0.5 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics T J=25°C Reverse Characteristics 10 IF Forward Current (A) 200 IR Reverse Current (µA) 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage TJ=75°C 150 100 50 0 400 TJ=125°C TJ=175°C T J=75°C TJ=125°C T J=175°C T J=25°C 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) 400 C, Capacitance (pF) 300 200 100 0 1 10 100 VR Reverse Voltage 1000 APTC80H29SCTG – Rev 2 July, 2006 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7