APTC80H29T1G

APTC80H29T1G Full - Bridge Super Junction MOSFET Power Module 3 Q1 5 Q2 7 4 Q3 2 Q4 9 VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 6 1 8 11 NTC 10 • 12 • • Pins 3/4 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 800 15 11 60 ±30 290 156 17 0.5 670 Unit V A V mΩ W A mJ August, 2007 1–6 APTC80H29T1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC80H29T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V 3 Max 25 250 290 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 15A Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A RG = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω Min Typ 2254 1046 54 90 11 45 10 13 83 35 243 139 425 171 µJ µJ nC Max Unit pF ns Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 15A IS = - 15A VR = 400V diS/dt = 100A/µs Tj = 25°C Tj = 25°C 550 15 Min Typ 15 11 Max Unit A 1.2 6 V V/ns ns µC August, 2007 2–6 APTC80H29T1G – Rev 0 dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C IS ≤ - 15A www.microsemi.com APTC80H29T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 40 30 20 10 0 0 TJ=125°C TJ=25°C TJ=125°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 16 ID, DC Drain Current (A) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 August, 2007 4–6 APTC80H29T1G – Rev 0 Normalized to VGS=10V @ 7.5A TC, Case Temperature (°C) www.microsemi.com APTC80H29T1G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.0 0.9 0.8 0.7 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 10000 Ciss C, Capacitance (pF) 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 limited by RDSon 100µs ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 7.5A 10 1ms 1 Single pulse TJ=150°C TC=25°C 1 100ms 0 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 August, 2007 VDS=640V ID=15A TJ=25°C VDS=160V VDS=400V Gate Charge (nC) www.microsemi.com 5–6 APTC80H29T1G – Rev 0 APTC80H29T1G Delay Times vs Current Rise and Fall times vs Current 50 td(off) 100 td(on) and td(off) (ns) 80 tr and tf (ns) 40 VDS=533V RG=5Ω TJ=125°C L=100µH tf 60 40 20 0 5 30 20 10 0 VDS=533V RG=5Ω TJ=125°C L=100µH tr td(on) 10 15 20 ID, Drain Current (A) Switching Energy vs Current 25 5 10 15 20 ID, Drain Current (A) 25 Switching Energy vs Gate Resistance 1250 Switching Energy (µJ) VDS=533V ID=15A TJ=125°C L=100µH 800 700 Eon and Eoff (µJ) 600 500 400 300 200 100 0 5 VDS=533V RG=5Ω TJ=125°C L=100µH Eon 1000 750 500 250 0 Eoff Eon Eoff Eoff 10 15 20 ID, Drain Current (A) 25 0 10 20 30 40 Gate Resistance (Ohms) 50 Operating Frequency vs Drain Current 400 350 Frequency (kHz) 300 250 200 150 100 50 0 4 6 8 10 12 ID, Drain Current (A) 14 Hard switching ZCS ZVS VDS=533V D=50% RG=5Ω TJ=125°C TC=75°C IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage 1000 100 TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 August, 2007 APTC80H29T1G – Rev 0 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6