APTC80SK15T1G

APTC80SK15T1G Buck chopper Super Junction MOSFET Power Module 5 6 Q1 7 8 CR2 3 4 NTC 11 VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration 1 2 12 • • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 800 28 21 110 ±30 150 277 17 0.5 670 Unit V A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC80SK15T1G – Rev 0 August, 2007 APTC80SK15T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V 3 Max 50 375 150 3.9 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A RG = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω Min Typ 4507 2092 108 180 22 90 10 13 83 35 486 278 850 342 µJ µJ nC Max Unit pF ns Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Min 1200 Typ Max 100 500 30 2.6 3.2 1.8 300 380 360 1700 3.1 V ns nC Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C di/dt =200A/µs www.microsemi.com 2–6 APTC80SK15T1G – Rev 0 August, 2007 Tj = 125°C Tj = 25°C APTC80SK15T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.45 1.2 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 80 60 40 20 0 0 TJ=125°C TJ=25°C TJ=125°C 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 30 ID, DC Drain Current (A) Normalized to VGS=10V @ 14A VGS=10V 25 20 15 10 5 0 25 50 75 100 125 150 August, 2007 4–6 APTC80SK15T1G – Rev 0 TC, Case Temperature (°C) www.microsemi.com APTC80SK15T1G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.0 0.9 0.8 0.7 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 14A 100 limited by RDSon 100µs 10 100ms 1ms 1 Single pulse TJ=150°C TC=25°C 1 10 100 1000 VDS, Drain to Source Voltage (V) 0 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 August, 2007 VDS=640V ID=28A TJ=25°C VDS=160V VDS=400V 10000 Ciss 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5–6 APTC80SK15T1G – Rev 0 APTC80SK15T1G Delay Times vs Current Rise and Fall times vs Current 50 td(off) td(on) and td(off) (ns) 40 tr and tf (ns) VDS=533V RG=2.5Ω TJ=125°C L=100µH 100 80 60 40 20 0 10 20 30 40 ID, Drain Current (A) Switching Energy vs Current 1500 1200 900 600 300 0 10 20 30 40 ID, Drain Current (A) 50 VDS=533V RG=2.5Ω TJ=125°C L=100µH tf 30 20 10 0 VDS=533V RG=2.5Ω TJ=125°C L=100µH tr td(on) 50 10 20 30 40 ID, Drain Current (A) 50 Switching Energy vs Gate Resistance 2500 Switching Energy (µJ) VDS=533V ID=28A TJ=125°C L=100µH Eon and Eoff (µJ) Eon 2000 1500 1000 500 0 0 Eon Eon Eoff Eoff 5 10 15 20 Gate Resistance (Ohms) 25 Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 6 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) Hard switching ZCS VDS=533V D=50% RG=2.5Ω TJ=125°C TC=75°C ZVS IDR, Reverse Drain Current (A) 400 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 August, 2007 APTC80SK15T1G – Rev 0 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6