APTC90AM60SCTG

APTC90AM60SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated . G1 OUT S1 Q2 G2 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V A V mΩ W A mJ August, 2009 1–6 APTC90AM60SCTG – Rev 0 0/VBU S S2 NTC1 • • • • Benefits • • • • • • OUT VBUS OUT 0/VBUS S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC90AM60SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Tj = 25°C Tj = 125°C 2.5 Typ 1000 50 3 Max 200 60 3.5 200 Unit µA mΩ V nA VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 52A Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Min Typ 13.6 0.66 540 64 230 70 20 400 25 1.8 1.5 2.52 1.7 mJ ns nC Max Unit nF mJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/µs Test Conditions VR=200V Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 350 600 60 1.1 1.4 0.9 24 48 66 300 1.15 V Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTC90AM60SCTG – Rev 0 August, 2009 trr Reverse Recovery Time ns APTC90AM60SCTG SiC parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 1200 Typ 64 112 20 1.6 2.3 80 192 138 Max 400 2000 1.8 3 Unit V µA A V nC pF IF = 20A, VR = 600V di/dt =1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.65 1 150 125 100 4.7 160 Unit °C/W SiC Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol