APTC90DAM60CT1G

厂商：
MICROSEMI(美高森美)
封装：
描述：
APTC90DAM60CT1G - Boost chopper Super Junction MOSFET Power Module - Microsemi Corporation

数据手册：

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数据手册
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APTC90DAM60CT1G 数据手册

APTC90DAM60CT1G Boost chopper Super Junction MOSFET Power Module 5 6 11 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • CR1 3 4 NTC Q2 9 10 1 2 • • • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged 12 CR1 SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Pins 1/2 ; 3/4 ; 5/6 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V A V mΩ W A mJ July, 2009 1–6 APTC90DAM60CT1G – Rev 1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC90DAM60CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Tj = 25°C Tj = 125°C 2.5 Typ 1000 50 3 Max 200 60 3.5 200 Unit µA mΩ V nA VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 52A Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Min Typ 13.6 0.66 540 64 230 70 20 400 25 1.8 1.5 2.52 1.7 mJ ns nC Max Unit nF mJ CR1 SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 30A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 1200 Typ 96 168 30 1.6 2.3 120 288 207 Max 600 3000 1.8 3 Unit V µA A V nC pF July, 2009 2–6 APTC90DAM60CT1G – Rev 1 IF = 30A, VR = 600V di/dt =1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V www.microsemi.com APTC90DAM60CT1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS SiC Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.63 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol

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APTC90DAM60CT1G

### 物料型号 - APTC90DAM60CT1G

### 器件简介 - 这是一个Boost chopper Super Junction MOSFET Power Module，具有900V的漏源击穿电压($V_{DSS}$)和最大60毫欧的漏源导通电阻($R_{DSon}$)在25°C时。

### 引脚分配 - 文档中提到Pins 1/2 ; 3/4 ; 5/6必须短接在一起。

### 参数特性 - 绝对最大额定值和电特性参数如下： - 漏源连续电流($I_D$)：25°C时为59A，80°C时为44A。 - 脉冲漏极电流($I_{DM}$)：150A。 - 栅源电压($V_{GS}$)：±20V。 - 漏源导通电阻($R_{DSon}$)：最大60毫欧。 - 最大功率耗散($P_{D}$)：25°C时为462W。 - 雪崩电流($I_{AR}$)：8.8A。 - 重复雪崩能量($E_{AR}$)：2.9毫焦。 - 单次雪崩能量($E_{AS}$)：1940焦耳。

### 功能详解 - 该模块适用于交流和直流电机控制、开关电源和功率因数校正。 - 特点包括COOLMOS技术、超低$R_{DSon}$、低米勒电容、低栅极电荷、高雪崩能量额定值、坚固耐用。 - 内部热敏电阻用于温度监测，具有很高的集成度。

### 应用信息 - 提供了出色的高频操作性能，可以直接安装在散热器上（隔离封装），具有低结到壳体的热阻、可焊接的电源和信号端子，便于PCB安装。

### 封装信息 - 提供了SP1封装的外形图，具体尺寸以毫米为单位标注。 - 还提供了与热阻、隔离电压、工作结温范围等相关的热和封装特性。

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