APTC90DAM60T1G

APTC90DAM60T1G Boost chopper Super Junction MOSFET VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring High level of integration Power Module 5 6 11 CR1 3 4 NTC Q2 9 10 1 2 12 • • • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V A V mΩ W A mJ August, 2009 1–5 APTC90DAM60T1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC90DAM60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Tj = 25°C Tj = 125°C 2.5 Typ 1000 50 3 Max 200 60 3.5 200 Unit µA mΩ V nA VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 52A Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Min Typ 13.6 0.66 540 64 230 70 20 400 25 3 1.5 4.2 1.7 mJ ns nC Max Unit nF mJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V Test Conditions VR=1000V Tj = 25°C Tj = 125°C Tc = 80°C Min 1000 Typ Max 100 500 60 2.2 2.8 1.8 235 305 460 2600 2.8 V ns nC August, 2009 2–5 APTC90DAM60T1G – Rev 0 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C di/dt =200A/µs www.microsemi.com APTC90DAM60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.9 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol