APTC90DSK12CT1G
Dual buck chopper Super Junction MOSFET SiC chopper diode
VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C
Application • AC and DC motor control • Switched Mode Power Supplies Features • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged
SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
• • •
Pins 3/4 must be shorted together
Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 900 30 23 75 ±20 120 250 8.8 2.9 1940 Unit V A V mΩ W A mJ
APTC90DSK12CT1G – Rev 0 September, 2009
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTC90DSK12CT1G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions
VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V
Min Tj = 25°C Tj = 125°C 2.5
Typ 500 100 3
Max 100 120 3.5 100
Unit µA mΩ V nA
VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 26A Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Min Typ 6800 330 270 32 115 70 20 400 25 900 750 1278 867 µJ ns nC Max Unit pF
µJ
SiC chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 1200 Typ 32 56 10 1.6 2.3 40 96 69 Max 200 1000 1.8 3 Unit V µA A V
APTC90DSK12CT1G – Rev 0 September, 2009
IF = 10A, VR = 600V di/dt =500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V
nC pF
www.microsemi.com
2–6
APTC90DSK12CT1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C
RT = R25 ⎡ ⎛1 exp ⎢ B25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎝ 25 ⎠⎦ ⎣
T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T
Min
Typ 50 5 3952 4
Max
Unit kΩ % K %
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS SiC Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 1.8 150 125 100 4.7 80 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
很抱歉,暂时无法提供与“APTC90DSK12CT1G”相匹配的价格&库存,您可以联系我们找货
免费人工找货