APTC90TDUM60TPG

APTC90TDUM60TPG Triple dual Common Source Super Junction MOSFET Power Module VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring • • • • D1 D3 D5 G1 NTC1 NTC2 S1/S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S6 G5 S5 S6 G6 D2 D4 D6 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V August, 2009 1–5 APTC90TDUM60TPG – Rev 0 A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC90TDUM60TPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Tj = 25°C Tj = 125°C 2.5 Typ 1000 50 3 Max 200 60 3.5 200 Unit µA mΩ V nA VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 52A Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Min Typ 13.6 0.66 540 64 230 70 20 400 25 3 1.5 4.2 1.7 mJ ns nC Max Unit nF mJ Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 52A IS = - 52A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 200A/µs 0.8 920 60 Min Typ Max 59 44 1.2 Unit A V ns µC www.microsemi.com 2–5 APTC90TDUM60TPG – Rev 0 August, 2009 APTC90TDUM60TPG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol