APTCV60HM70RT3G
Trench & Field Stop IGBT3 Q1, Q3:
VCES = 600V ; IC = 50A @ Tc = 80°C
Full bridge + rectifier bridge
CoolMOS & Trench + Field Stop IGBT3
Power Module
CoolMOS Q2, Q4:
VDSS = 600V
RDSon = 70m max @ Tj = 25°C
Application
Solar converter
Features
Q2, Q4 CoolMOS
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
Q1, Q3 Trench & Field Stop IGBT3
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
Top switches : Trench + Field Stop IGBT3
Bottom switches : CoolMOS
Very low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
High level of integration
All multiple inputs and outputs must be shorted together
7/24 ; 5/26
Benefits
Optimized conduction & switching losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 - 13
APTCV60HM70RT3G
1. Top switches
1.1 Top Trench + Field Stop IGBT3 characteristics (per IGBT)
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Min
Typ
Max
Unit
250
1.9
µA
6.5
600
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
RthJC
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=50A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
VGE = ±15V
Tj = 25°C
VBus = 300V
IC = 50A
Tj = 150°C
RG = 8.2
VGE 15V ; VBus = 360V
tp 6µs ; Tj = 150°C
Junction to Case Thermal resistance
3150
200
95
pF
0.5
µC
110
45
200
ns
40
120
50
250
ns
60
1.35
mJ
1.75
250
A
0.85
www.microsemi.com
°C/W
2 - 13
APTCV60HM70RT3G
1.2 Top diode characteristics (CR1, CR3) (per diode)
Symbol Characteristic
VRRM
Test Conditions
Min
IRM
Maximum Reverse Leakage Current
IF
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Typ
Max
600
Maximum Peak Repetitive Reverse Voltage
IF = 25A
VR = 400V
di/dt =200A/µs
V
Tj = 25°C
Tj = 125°C
25
500
Tc = 80°C
IF = 25A
IF = 50A
IF = 25A
Unit
Tj = 125°C
25
1.8
2.2
1.6
Tj = 25°C
30
Tj = 125°C
Tj = 25°C
175
55
Tj = 125°C
485
Junction to Case Thermal resistance
µA
A
2.2
V
ns
nC
1.4
°C/W
2. Bottom switches
2.1 Bottom CoolMOS characteristics (Per CoolMOS)
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
39
29
160
±20
70
250
20
1
1800
Unit
V
A
V
m
W
A
mJ
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain Source on Resistance
Gate Threshold Voltage
Gate Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
VGS = 10V, ID = 39A
VGS = VDS, ID = 2.7mA
VGS = ±20 V, VDS = 0V
www.microsemi.com
Typ
Tj = 25°C
Tj = 125°C
2.1
3
Max
25
250
70
3.9
±100
Unit
µA
m
V
nA
3 - 13
APTCV60HM70RT3G
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal resistance
Min
Typ
7
2.56
0.21
Max
Unit
nF
259
nC
29
111
21
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5
30
ns
283
84
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
670
µJ
980
1096
µJ
1206
0.5
°C/W
Max
Unit
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Tc = 25°C
Tc = 80°C
Typ
39
29
A
VGS = 0V, IS = - 39A
IS = - 39A
VR = 350V
diS/dt = 100A/µs
1.2
6
V
V/ns
Tj = 25°C
580
ns
Tj = 25°C
23
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 39A
di/dt 100A/µs VR VDSS
Tj 150°C
3. Rectifier bridge (per diode)
Absolute maximum ratings
Symbol
VR
VRRM
IF(AV)
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Duty cycle = 50%
Maximum Average Forward Current
Non-Repetitive Forward Surge Current
8.3ms
Max ratings
Unit
600
V
40
320
A
TC = 80°C
TJ = 45°C
Electrical Characteristics
Symbol Characteristic
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
Test Conditions
IF = 30A
IF = 60A
IF = 30A
Tj = 125°C
Tj = 25°C
VR = 600V
Tj = 125°C
www.microsemi.com
Min
Typ
1.8
2.2
1.5
Max
2.2
Unit
V
250
500
µA
4 - 13
APTCV60HM70RT3G
Dynamic Characteristics
Symbol Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF=1A,VR=30V
di/dt = 100A/µs
IF = 30A
VR = 400V
di/dt = 200A/µs
IRRM
trr
Reverse Recovery Current
Reverse Recovery Time
IF = 30A
VR = 400V
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
RthJC
Junction to Case Thermal Resistance
Min
Tj = 25°C
Typ
Max
22
Tj = 25°C
25
Tj = 125°C
160
Tj = 25°C
35
Tj = 125°C
480
Tj = 25°C
3
Tj = 125°C
6
Tj = 125°C
di/dt = 1000A/µs
Unit
ns
ns
nC
A
85
ns
920
µC
20
A
1.2
°C/W
4. Thermal and package characteristics
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
R25/R25
B25/85
B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
k
%
K
%
Min
4000
-40
-40
-40
2
Typ
Max
Unit
V
T25 = 298.15 K
TC=100°C
RT
R 25
exp B 25 / 85
1
T25
1
T
T: Thermistor temperature
RT: Thermistor value at T
Package characteristics
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
www.microsemi.com
M4
175
125
100
3
110
°C
N.m
g
5 - 13
APTCV60HM70RT3G
SP3 Package outline (dimensions in mm)
www.microsemi.com
6 - 13
APTCV60HM70RT3G
5. Top switches curves
5.1 Top Trench + Field Stop IGBT3 typical performance curves (per IGBT)
Output Characteristics (VGE=15V)
Output Characteristics
100
100
TJ=25°C
80
TJ = 150°C
VGE=19V
80
TJ=125°C
VGE=13V
TJ=150°C
60
60
VGE=15V
40
40
20
20
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
VGE=9V
0
2
2.5
0
3
3.5
1.5
2
VCE (V)
2.5
3
3.5
VCE = 300V
VGE = 15V
RG = 8.2
TJ = 150°C
3
TJ=25°C
80
1
Energy losses vs Collector Current
Transfert Characteristics
100
0.5
2.5
60
2
1.5
40
1
TJ=150°C
20
0.5
TJ=25°C
0
0
5
6
7
8
9
10
11
0
12
20
40
Switching Energy Losses vs Gate Resistance
3.5
100
Reverse Bias Safe Operating Area
100
2.5
75
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
1.5
80
125
3
2
60
IC (A)
VGE (V)
50
VGE=15V
TJ=150°C
RG=8.2
25
1
0
5
15
25
35
45
55
Gate Resistance (ohms)
65
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.8
0.6
D = 0.9
0.7
0.5
0.4
0.2
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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7 - 13
APTCV60HM70RT3G
5.2 Top diode characteristics (per diode)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
1.4
0.9
1.2
0.7
1
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
50
40
TJ=125°C
30
20
TJ=25°C
10
0
0.0
0.5
1.0
1.5
2.0
2.5
VF, Anode to Cathode Voltage (V)
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8 - 13
APTCV60HM70RT3G
6. Bottom switches CoolMOS (per CoolMOS)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
140
200
160
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
VGS=15&10V
6.5V
100
6V
120
80
5.5V
60
80
5V
40
40
4.5V
TJ=125°C
20
4V
0
TJ=25°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
1.05
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
40
RDS(on) vs Drain Current
1.1
Normalized to
VGS=10V @ 19.5A
0
VGS=10V
35
30
25
VGS=20V
1
20
15
0.95
10
5
0.9
0
0
10
20
30
40
50
60
ID, Drain Current (A)
www.microsemi.com
25
50
75
100
125
TC, Case Temperature (°C)
150
9 - 13
APTCV60HM70RT3G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
3.0
1.2
VGS=10V
ID= 39A
2.5
1.1
2.0
1.5
1.0
1.0
0.9
0.5
0.0
0.8
25
50
75
100
125
25
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.1
50
75
100
125
150
TJ, Junction Temperature (°C)
1000
1.0
limited by RDSon
100
0.9
100 µs
0.8
10
Single pulse
TJ=150°C
TC=25°C
0.7
0.6
1 ms
10 ms
1
25
50
75
100
125
150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
14
ID=39A
TJ=25°C
12
10
Coss
1000
VDS=120V
VDS=300V
8
VDS=480V
6
Crss
100
4
2
0
10
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
www.microsemi.com
0
50
100
150 200
Gate Charge (nC)
250
300
10 - 13
APTCV60HM70RT3G
Delay Times vs Current
350
Rise and Fall times vs Current
120
td(off)
300
250
80
VDS=400V
RG=5
TJ=125°C
L=100µH
200
150
VDS=400V
RG=5
TJ=125°C
L=100µH
100
tf
60
40
100
50
tr
20
td(on)
0
0
0
10
20
30
40
50
60
70
0
10
20
ID, Drain Current (A)
VDS=400V
ID=39A
TJ=125°C
L=100µH
4
Eoff
1.5
60
70
3
Eoff
Eon
1
Eon
2
0.5
50
5
VDS=400V
RG=5
TJ=125°C
L=100µH
2
40
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
30
ID, Drain Current (A)
1
Eoff
0
0
0
10
20 30 40 50
ID, Drain Current (A)
60
70
0
5
10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
140
Source to Drain Diode Forward Voltage
1000
120
100
TJ=150°C
100
80
ZVS
60
hard
VDS=400V
switching
D=50%
RG=5
TJ=125°C
ZCS
TC=75°C
40
20
0
5
10
15
20
25
30
ID, Drain Current (A)
TJ=25°C
10
1
35
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
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11 - 13
APTCV60HM70RT3G
7. Typical rectifier bridge Performance Curve (per diode)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
D = 0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
60
175
50
150
TJ=125°C
40
Trr vs. Current Rate of Charge
TJ=125°C
VR=400V
125
30
60 A
100
20
30 A
TJ=25°C
10
75
0
50
0.0
0.5
1.0
1.5
2.0
2.5
15 A
0
200
QRR vs. Current Rate Charge
1.5
TJ=125°C
VR=400V
600
800
1000 1200
IRRM vs. Current Rate of Charge
25
TJ=125°C
VR=400V
60 A
20
1.0
400
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
30 A
15
15 A
30 A
60 A
15 A
10
0.5
5
0.0
0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
200
175
150
125
100
75
50
25
0
1
10
100
1000
VR, Reverse Voltage (V)
COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. COOLMOS is a trademark of Infineon
Technologies AG.
www.microsemi.com
12 - 13
APTCV60HM70RT3G
DISCLAIMER
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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