APTCV60TLM24T3G

APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS™ Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Q2, Q3 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • • • • • Q1, Q4 CoolMOS™ Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant October, 2009 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1 - 13 APTCV60TLM24T3G – Rev 0 All ratings @ Tj = 25°C unless otherwise specified APTCV60TLM24T3G Q1 & Q4 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A mJ Tc = 25°C Q1 & Q4 Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 3 Max 350 600 24 3.9 200 Unit µA mΩ V nA Q1 & Q4 Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff RthJC Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal Resistance Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 95A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Min Typ 14.4 17 300 68 102 21 30 100 45 1350 1040 2200 1270 0.27 µJ ns nC Max Unit nF °C/W www.microsemi.com 2 - 13 APTCV60TLM24T3G – Rev 0 October, 2009 µJ APTCV60TLM24T3G Q2 & Q3 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 100 75 140 ±20 250 150A @ 550V Unit V A V W Q2 & Q3 Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit µA V V nA 5.0 Q2 & Q3 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 75A Tj = 25°C RG = 4.7Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Min Typ 4620 300 140 0.8 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6 380 0.60 ns Max Unit pF µC ns mJ mJ October, 2009 APTCV60TLM24T3G – Rev 0 A °C/W www.microsemi.com 3 - 13 APTCV60TLM24T3G CR2 & CR3 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 15A IF = 30A IF = 15A IF = 15A VR = 800V IF = 15A VR = 800V Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Min 1200 Typ Max 100 500 15 2.8 3.4 2.4 240 290 260 960 0.9 2 3.3 V ns nC mJ °C/W Unit V µA A di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C di/dt =1000A/µs CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V IF = 30A VR = 400V Test Conditions VR=600V Tj = 25°C Tj = 125°C Tc = 80°C Min 600 Typ Max 25 500 30 1.8 2.2 1.5 25 160 35 480 0.6 1.2 2.2 V ns nC mJ °C/W Unit V µA A di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C di/dt =1000A/µs www.microsemi.com 4 - 13 APTCV60TLM24T3G – Rev 0 October, 2009 APTCV60TLM24T3G CR7 & CR8 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Symbol R25 ∆R25/R25 B25/85 ∆B/B Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V IF = 30A VR = 800V Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Min 1200 Typ Max 100 500 30 2.6 3.2 1.8 300 380 360 1700 1.6 1.2 3.1 V ns nC mJ °C/W Unit V µA A di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C di/dt =1000A/µs Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 ⎡ ⎛1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎝ 25 ⎠⎦ ⎣ T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit kΩ % K % www.microsemi.com 5 - 13 APTCV60TLM24T3G – Rev 0 October, 2009 APTCV60TLM24T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6.5V 6V 5.5V RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 100 80 60 40 20 0 October, 2009 8 - 13 APTCV60TLM24T3G – Rev 0 25 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTCV60TLM24T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 1000000 C, Capacitance (pF) 100000 10000 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Crss Coss Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 95A 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VDS=480V ID=95A TJ=25°C VDS=120V VDS=300V www.microsemi.com 9 - 13 APTCV60TLM24T3G – Rev 0 October, 2009 APTCV60TLM24T3G 140 120 td(on) and td(off) (ns) Delay Times vs Current 70 td(off) VDS=400V RG=2.5Ω TJ=125°C L=100µH td(on) Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 80 60 40 20 0 0 tf 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) VDS=400V ID=95A TJ=125°C L=100µH 4 Switching Energy (mJ) 3 VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon 4 3 2 1 0 Eoff Eon 2 1 Eoff 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5ΩT J=125°C T =75°C 250 Frequency (kHz) 200 150 100 50 0 10 20 hard switching IDR, Reverse Drain Current (A) 300 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 October, 2009 10 - 13 APTCV60TLM24T3G – Rev 0 30 40 50 60 70 ID, Drain Current (A) 80 90 VSD, Source to Drain Voltage (V) www.microsemi.com APTCV60TLM24T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 80 60 IF (A) TJ=125°C 40 TJ=25°C 20 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4 Energy losses vs Collector Current 1 0.75 E (mJ) 0.5 0.25 0 0 20 40 IC (A) 60 80 VCE = 400V VGE = 15V RG = 2.5Ω TJ = 125°C Switching Energy Losses vs Gate Resistance 1 0.75 E (mJ) 0.5 VCE = 400V VGE =15V IC = 30A TJ = 125°C 0.25 0 0 2 4 6 8 Gate Resistance (ohms) 10 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0 0.00001 www.microsemi.com 11 - 13 APTCV60TLM24T3G – Rev 0 October, 2009 Rectangular Pulse Duration (Seconds) APTCV60TLM24T3G CR7 & CR8 Typical performance curve Forward Current vs Forward Voltage 80 IF, Forward Current (A) TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Energy losses vs Collector Current 2.5 2 E (mJ) E (mJ) 1.5 1 0.5 0 0 20 40 IC (A) 60 80 VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C Switching Energy Losses vs Gate Resistance 1.8 1.6 1.4 1.2 1 0.8 0.6 0 10 20 30 Gate resistance (ohms) VCE = 800V VGE =15V IC = 30A TJ = 125°C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (°C/W) 1.2 1 0.8 0.6 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 Rectangular Pulse Duration (Seconds) www.microsemi.com 12 - 13 APTCV60TLM24T3G – Rev 0 October, 2009 0 0.00001 0.01 0.1 1 10 APTCV60TLM24T3G CR2 & CR3 Typical performance curve Forward Current vs Forward Voltage 30 IF, Forward Current (A) TJ=125°C 20 TJ=25°C 10 0 0 1 2 3 4 VF, Anode to Cathode Voltage (V) Energy losses vs Collector Current Switching Energy Losses vs Gate Resistance 1 0.8 0.6 VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1.2 1 0.8 E (mJ) 0.6 0.4 0.2 0 0 5 10 15 IC (A) 20 25 30 E (mJ) 0.4 0.2 0 0 VCE = 800V VGE =15V IC = 15A TJ = 125°C 5 10 15 20 25 Gate resistance (ohms) 30 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.4 Thermal Impedance (°C/W) 2 1.6 1.2 0.8 0.4 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 13 - 13 APTCV60TLM24T3G – Rev 0 October, 2009