APTDC10H1201G

APTDC10H1201G SiC Diode Full Bridge Power Module 3 CR1 5 6 CR2 CR4 • • • Benefits • • • • • • • All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration VRRM = 1200V IF = 10A @ Tc = 80°C 4 CR3 1 2 Application • • • • Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features 7 8 9 10 Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs Max ratings 1200 TC = 80°C TC = 25°C 10 125 Unit V A February, 2009 1-3 APTDC10H1201G – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTDC10H1201G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25°C IF = 10A Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 10A, VR = 600V di/dt = 500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2.3 32 56 40 96 69 Max 1.8 3.0 200 1000 Unit V µA nC pF Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol