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APTDF100H1201G

APTDF100H1201G

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    SP1

  • 描述:

    DIODE MODULE FULL BRIDGE SP1

  • 详情介绍
  • 数据手册
  • 价格&库存
APTDF100H1201G 数据手册
APTDF100H1201G Fast Diode Full Bridge Power Module 3 CR1 5 6 CR2 CR4 4 CR3 1 2 VRRM = 1200V IC = 100A @ Tc = 60°C Application • • • • Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • • Benefits • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration 7 8 9 10 All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 25°C TC = 60°C TC = 45°C Max ratings 1200 120 100 500 A Unit V August, 2007 1-4 APTDF100H1201G – Rev 0 Non-Repetitive Forward Surge Current These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTDF100H1201G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 100A IF = 150A IF = 100A Tj = 125°C Tj = 25°C VR = 1200V Tj = 125°C VR = 200V Min Typ 2.4 2.7 1.8 Max 3 Unit V 100 500 110 µA pF Dynamic Characteristics Symbol Characteristic trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IF = 100A VR = 800V di/dt=1000A/µs IF = 100A VR = 800V di/dt = 200A/µs Test Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Min Typ 385 480 1055 5240 6 19 210 9.4 70 Max Unit ns nC A ns µC A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTDF100H1201G
1. 物料型号: - 型号名称:APTDF100H1201G

2. 器件简介: - 该器件是一个快速二极管全桥功率模块,具有超快恢复时间、软恢复特性、高阻断电压、高电流、低漏电流、非常低的杂散电感和高集成度等特点。

3. 引脚分配: - 文档中提到了所有多个输入和输出必须短接在一起,例如3/4、5/6、7/8、1/2、9/10。

4. 参数特性: - VRRM:最大重复峰值反向电压1200V - IC:在Tc=60°C时,最大平均正向电流100A - IFSM:非重复正向浪涌电流500A(8.3ms,Tc=45°C)

5. 功能详解: - 该器件适用于不间断电源(UPS)、感应加热焊接设备、高速整流器等应用。 - 特点包括高频操作下的卓越性能、低损耗、低噪声开关、可焊接端子便于PCB安装、直接安装到散热器(隔离封装)、低结到外壳热阻、符合RoHS标准。

6. 应用信息: - 适用于UPS、感应加热焊接设备、高速整流器等。

7. 封装信息: - 提供了SP1封装的外形图,尺寸以毫米为单位。 - 有关SP1功率模块的安装说明,可参考Microsemi网站上的应用说明1904。
APTDF100H1201G 价格&库存

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