APTDF200H170G

APTDF200H170G Diode Full Bridge Power Module + AC1 AC2 VRRM = 1700V IC = 200A @ Tc = 55°C Applicatio n • • • • Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • • Benefits AC2 + - - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration • • • • • • AC1 Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Tc = 25°C Tc = 55°C Tj = 25°C Max ratings 1700 240 Unit V RMS Forward Current Non-Repetitive Forward Surge Current These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF200H170G – Rev 1 June, 2006 200 250 600 A APTDF200H170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM Diode Forward Voltage Maximum Reverse Leakage Current Test Conditions IF = 200A VR = 1700V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Tj = 25°C IF = 200A VR = 900V di/dt = 2000A/µs Min Typ 2.2 2.1 Max 2.5 350 600 Unit V µA Dynamic Characteristics Symbol Characteristic trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 572 704 40 70 140 200 Max Unit ns µC A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol