APTDF400U120G

APTDF400U120G Single diode Power Module Applicatio n • • • • • • • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Electric vehicles VCES = 1200V IC = 400A @ Tc = 80°C Features • • • • • • Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current A1 A S P M™ A2 A S P M™ Benefits K1 K2 • • • • • Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Tc = 25°C Tc = 80°C Tj = 25°C Max ratings 1200 450 400 750 5000 Unit V RMS Forward Current Non-Repetitive Forward Surge Current A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF400U120G – Rev 1 June, 2006 APTDF400U120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 500A IF = 1000A IF = 500A Tj = 150°C Tj = 25°C VR = 1200V Tj = 125°C VR = 200V Min Typ 2.5 2.0 2500 5000 600 Max 2.5 Unit V µA pF Dynamic Characteristics Symbol Characteristic trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 dIM/dt Forward Recovery Time Reverse Recovery Current Reverse Recovery Charge Forward Recovery Voltage Rate of Fall of Recovery Current Reverse Recovery Time Test Conditions IF=1A,VR=30V di/dt = 15A/µs IF = 500A VR = 650V di/dt=1000A/µs Tj = 25°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Min Typ 90 110 175 220 220 70 120 10 30 26 26 1200 800 Max Unit ns ns A µC V A/µs IF = 500A VR = 650V di/dt=1000A/µs Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case VISOL t =1 min, I isol