APTGF100A120TG

APTGF100A120TG Phase leg NPT IGBT Power Module VBUS Q1 G1 NTC2 VCES = 1200V IC = 100A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 1200 135 100 300 ±20 568 200A @ 1200V Unit V A V W July, 2006 1-6 APTGF100A120TG – Rev 2 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 E2 OUT VBUS 0/VBUS OUT E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF100A120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V Tj = 25°C VCE = 1200V Tj = 125°C Tj = 25°C VGE = 15V IC = 100A Tj = 125°C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0 V Min Typ Max 350 600 3.7 6.5 150 Unit µA V V nA 3.2 4.0 4.5 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 100A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 Ω VGE = 15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C R G = 2.5 Ω Min Typ 6900 660 440 660 70 400 35 65 320 30 35 65 360 40 13.9 6.1 Max Unit pF nC ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=1200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 800V di/dt =800A/µs Tj = 25°C Tj = 125°C Tc = 70°C Min 1200 Typ Max 350 600 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 370 500 2.64 13.8 ns µC www.microsemi.com 2-6 APTGF100A120TG – Rev 2 July, 2006 Tj = 125°C 120 2.0 2.3 1.8 2.5 V APTGF100A120TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.22 0.32 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol