APTGF100SK120TG
Buck chopper NPT IGBT Power Module
VBUS Q1 G1 NTC2
VCES = 1200V IC = 100A @ Tc = 80°C
Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 1200 135 100 300 ±20 568 200A @ 1200V Unit V A V W
APTGF100SKL120TG – Rev 2 July, 2006
E1 O UT
0/VBU S SENSE
0 /VBU S
NTC1
0/VBUS SENSE
OUT
VBUS
0/VBUS
OUT
E1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C
Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www .microsemi.com
1-6
APTGF100SK120TG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V Tj = 25°C VCE = 1200V Tj = 125°C Tj = 25°C VGE = 15V IC = 100A Tj = 125°C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0 V Min Typ Max 350 600 3.7 6.5 150 Unit µA V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 100A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 Ω VGE = 15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C R G = 2.5 Ω
Min
Typ 6900 660 440 660 70 400 35 65 320 30 35 65 360 40 13.9 6.1
Max
Unit pF
nC
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 70°C
Min 1200
Typ
Max 350 600
Unit V µA A
IF = 120A Reverse Recovery Time Reverse Recovery Charge IF = 120A VR = 800V di/dt =400A/µs
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
1.8 400 470 2400 8000
ns nC
www .microsemi.com
2-6
APTGF100SKL120TG – Rev 2 July, 2006
IF = 120A IF = 240A
120 2.0 2.3
2.5 V
APTGF100SK120TG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.22 0.46 150 125 100 4.7 160 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
很抱歉,暂时无法提供与“APTGF100SK120TG”相匹配的价格&库存,您可以联系我们找货
免费人工找货