APTGF150H120G

APTGF150H120G Full - Bridge NPT IGBT Power Module VBUS Q1 G1 Q3 G3 VCES = 1200V IC = 150A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 1200 200 150 300 ±20 961 300A @ 1200V Unit V A July, 2006 1-5 APTGF150H120G – Rev 2 E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF150H120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0 V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 150A Tj = 125°C VGE = VCE, IC = 5 mA VGE = ±20V, VCE = 0 V Min Typ 3.2 3.9 4.5 Max 350 600 3.7 6.5 ±500 Unit µA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω VGE = 15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C R G = 5.6Ω Min Typ 10.2 1.4 0.75 120 50 310 20 130 60 360 30 18 Max Unit nF ns ns mJ 8 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 85°C IF = 150A Tj = 25°C Tj = 125°C Tj = 25°C IF = 150A VR = 600V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 350 600 Unit V µA A V ns µC mJ Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse recovery Energy VR=1200V 150 2.1 1.9 120 210 11 28 3.6 9 di/dt = 3600A/µs www.microsemi.com 2-5 APTGF150H120G – Rev 2 July, 2006 APTGF150H120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.13 0.24 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol