APTGF15H120T3G

APTGF15H120T3G Full - Bridge NPT IGBT Power Module 13 14 VCES = 1200V IC = 15A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC o f VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 30A@1150V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF15H120T3G – Rev 1 Max ratings 1200 25 15 60 ±20 140 Unit V A V W July, 2006 APTGF15H120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0 V VCE = 1200V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 15A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20V, VCE = 0 V Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =15A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 15A R G = 33Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 15A R G = 33Ω VGE = 15V Tj = 125°C VBus = 400V IC = 15A Tj = 125°C R G = 33Ω Typ Max 250 500 3.7 6 400 Typ 1000 150 70 99 10 70 60 50 315 30 60 50 356 40 2 mJ 1 Max Unit µA V V nA Unit pF 2.5 4 3.2 4.0 Dynamic Characteristics Min nC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C IF = 15A VR = 600V di/dt =1000A/µs Min 1200 Typ Max 250 500 Unit V µA A V ns µC mJ July, 2006 2-6 APTGF15H120T3G – Rev 1 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 15A VGE = 0 V 15 2.1 1.9 95 190 1.5 3.1 0.5 1.2 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C www.microsemi.com APTGF15H120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor temperature Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.9 2.0 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol < 1mA, 50/60Hz To heatsink M4 2500 -40 -40 -40 2.5 SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF15H120T3G – Rev 1 July, 2006 17 28 APTGF15H120T3G Typical Performance Curve 70 Ic, Collector Current (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE , Gate to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle O utput characteristics (VGE=15V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 16 14 12 10 8 6 4 2 0 8 Output Characteristics (VGE =10V) 250µs Pulse Test < 0.5% Duty cycle TJ=25°C TJ=25°C T J=125°C TJ=125°C 0 0.5 1 1.5 2 2.5 3 3.5 V CE, Collector to Emitter Voltage (V) Gate Charge IC = 1 5A TJ = 25°C V CE =240V V CE =600V 70 Ic, Collector Current (A) 18 16 14 12 10 8 6 4 2 0 0 60 50 40 30 20 10 0 0 V CE =960V T J=125°C TJ=25°C 2.5 5 7.5 10 12.5 V GE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle 15 20 40 60 80 100 120 Gate Charge (nC) O n state Voltage vs Junction Temperature VCE, Collector to Emitter Voltage (V) V CE, Collector to Emitter Voltage (V) 9 8 7 6 5 4 3 2 1 0 9 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 Ic=7.5A 250µs Pulse Test < 0.5% Duty cycle V GE = 15V Ic=30A Ic=15A Ic=30A Ic=15A Ic=7.5A 10 11 12 13 14 15 16 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 Ic, DC Collector Current (A) 40 35 30 DC Collector Current vs Case Temperature 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4-6 APTGF15H120T3G – Rev 1 July, 2006 25 APTGF15H120T3G Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) VCE = 600V RG = 33Ω Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 75 70 65 60 55 50 0 5 10 15 20 25 30 35 ICE, Collector to Emitter Current (A) C urrent Rise Time vs Collector Current 400 VGE=15V, TJ=125°C 350 V GE = 15V 300 V GE=15V, TJ=25°C 250 VCE = 600V RG = 33Ω 200 0 5 10 15 20 25 30 35 ICE, Collector to Emitter Current (A) C urrent Fall Time vs Collector Current 160 V CE = 600V R G = 33Ω 50 45 tf, Fall Time (ns) TJ = 1 25°C tr, Rise Time (ns) 120 40 35 30 25 TJ = 2 5°C 80 VGE=15V 40 VCE = 600V, V GE = 15V, R G = 3 3Ω 0 0 5 10 15 20 25 30 35 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current V CE = 6 00V RG = 3 3Ω 20 0 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) 35 Eon, Turn-On Energy Loss (mJ) Eoff, Turn-off Energy Loss (mJ) 8 7 6 5 4 3 2 1 0 0 Turn-Off Energy Loss vs Collector Current 2.5 TJ=125°C, VGE=15V 2 1.5 1 0.5 0 0 V CE = 6 00V V GE = 15V RG = 33 Ω TJ = 1 25°C TJ=25°C, V GE=15V TJ = 25°C 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) 35 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) R everse Bias Safe Operating Area 35 Switching Energy Losses (mJ) 8 7 6 5 4 3 2 1 0 Switching Energy Losses vs Gate Resistance V CE = 600V VGE = 1 5V TJ= 125°C Eon, 15A 35 IC , Collector Current (A) 30 25 20 15 10 5 0 0 400 800 1200 Eoff, 15A Gate Resistance (Ohms) VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APTGF15H120T3G – Rev 1 0 20 40 60 80 100 120 July, 2006 APTGF15H120T3G Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000 Operating Frequency vs Collector Current 120 100 80 60 40 20 0 0 5 10 15 20 IC, Collector Current (A) 25 Hard switching ZCS ZVS VCE = 600V D = 50% RG = 33Ω TJ = 125°C TC= 75°C C, Capacitance (pF) Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (°C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.2 0.3 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF15H120T3G – Rev 1 July, 2006