APTGF180DU60TG

APTGF180DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C1 C2 Q1 G1 Q2 G2 E1 E2 E NT C1 NT C2 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 600 220 180 630 ±20 833 400A @ 600V Unit V July, 2006 1-6 APTGF180DU60TG – Rev 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C A V W Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF180DU60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V Tj = 25°C VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 180A Tj = 125°C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0 V Min Typ Max 300 1000 2.5 5 ±200 Unit µA V V nA 2.0 2.2 3 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 180A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 180A Tj = 125°C R G = 2.5 Ω Min Typ 8.6 0.94 0.8 660 580 400 26 25 150 30 26 25 170 40 8.6 Max Unit nF nC ns ns mJ 7 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=600V IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt =800A/µs Tj = 25°C Tj = 125°C T c = 70°C Min 600 Typ Max 750 1500 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 520 2800 ns nC www.microsemi.com 2-6 APTGF180DU60TG – Rev 2 July, 2006 Tj = 125°C 120 1.6 1.9 1.4 1.8 V APTGF180DU60TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.15 0.32 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol