APTGF180H60G

APTGF180H60G Full - bridge NPT IGBT Power Module VBUS Q1 G1 Q3 G3 VCES = 600V IC = 180A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 600 220 180 630 ±20 833 400A @ 600V Unit V A V W E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF180H60G – Rev 2 July, 2006 APTGF180H60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V Tj = 25°C VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 180A Tj = 125°C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0 V Min Typ Max 300 1000 2.5 5 ±200 Unit µA V V nA 2.0 2.2 3 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 180A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 180A Tj = 125°C R G = 2.5 Ω Min Typ 8.6 0.94 0.8 660 580 400 26 25 150 30 26 25 170 40 8.6 Max Unit nF nC ns ns mJ 7 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=600V IF = 200A IF = 400A IF = 200A IF = 200A VR = 400V di/dt =400A/µs Tj = 25°C Tj = 125°C Tc = 80°C Min 600 Typ Max 350 750 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 200 1.6 1.9 1.4 180 220 780 2900 1.8 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com 2-6 APTGF180H60G – Rev 2 July, 2006 APTGF180H60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.15 0.32 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol