APTGF200DA120D3G
Boost chopper NPT IGBT Power Module
VCES = 1200V IC = 200A @ Tc = 80°C
3
Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant
Q2 6 7
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 300 200 400 ±20 1400 400A@1150V Unit V A V W
September, 2008 1-5 APTGF200DA120D3G – Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF200DA120D3G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V Min Typ 3.2 3.9 5.8 Max 5 3.7 6.4 400 Unit mA V V nA
5.2
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=±15V, IC=200A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C RG = 4.7Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Typ 13 1 2.1 100 60 530 30 110 70 550 40 19 mJ 15 1300 A Max Unit nF µC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRRM IF VF trr Qrr Err
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Min 1200
Typ
Max 750 1000
Unit V µA A
September, 2008 2-5 APTGF200DA120D3G – Rev 0
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
IF = 200A
200 2.1 1.9 100 200 14 40 5.2 11.2
V ns µC mJ
IF = 200A VR = 600V
di/dt =3000A/µs
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APTGF200DA120D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.09 0.16 150 125 125 5 5 350 Unit
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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