APTGF200U120DG

APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module EK E C VCES = 1200V IC = 200A @ Tc = 80°C Applicatio n • Zero Current Switching resonant mode Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 1200 275 200 600 ±20 1136 400A @ 1200V Unit V A V W G CK E CK C EK G Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF200U120DG – Rev 1 July, 2006 APTGF200U120DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions Tj = 25°C VGE = 0 V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE, IC = 4 mA VGE = ±20V, VCE = 0 V Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 200A Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A R G = 1.2Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A R G = 1.2Ω VGE = 15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 1.2Ω Min Typ Max 500 750 3.7 6.5 ±300 Typ 13.8 1.32 0.88 1320 140 800 35 65 320 30 35 65 360 40 22 mJ 12.2 Max Unit µA V V nA Unit nF 3.2 4.0 4.5 Dynamic Characteristics Min nC ns ns Series diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C IF = 240A IF = 480A IF = 240A IF = 240A VR = 800V di/dt =800A/µs Min 1200 Typ Max 750 1000 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=1200V trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 400 470 4.8 16 ns µC www.microsemi.com 2–6 APTGF200U120DG – Rev 1 July, 2006 Tj = 125°C 240 2 2.3 1.8 2.5 V APTGF200U120DG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.11 0.23 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol