APTGF250DA60D3G

APTGF250DA60D3G Boost chopper NPT IGBT Power Module VCES = 600V IC = 250A @ Tc = 80°C 3 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Q2 6 7 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 400 250 600 ±20 1250 600A @ 520V Unit V September, 2008 1-5 APTGF250DA60D3G – Rev 0 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF250DA60D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 6 mA VGE = 20V, VCE = 0V Min Typ 1.95 2.2 5.8 Max 500 2.45 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A RG = 6Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 300A RG = 6Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 300A Tj = 125°C RG = 6Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Typ 13 1.2 720 150 72 530 40 160 75 550 50 14 mJ 13 1350 A ns Max Unit nF nC ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 300A VR = 300V IF = 300A VGE = 0V Test Conditions VR=600V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 600 Typ Max 750 1000 300 1.25 1.2 150 250 20 32 4 7.6 1.6 Unit V µA A V ns µC mJ September, 2008 2-5 APTGF250DA60D3G – Rev 0 di/dt =4800A/µs www.microsemi.com APTGF250DA60D3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.1 0.21 150 125 125 5 5 350 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol