APTGF25A120T1G

APTGF25A120T1G Phase leg NPT IGBT Power Module 5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11 VCES = 1200V IC = 25A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 40 25 100 ±20 208 50A@1150V Unit V March, 2009 1–6 APTGF25A120T1G – Rev 1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF25A120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6 400 Unit µA V V nA 2.5 4 3.2 4.0 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 600V IC =25A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 25A RG = 22Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 25A RG = 22Ω VGE = 15V Tj = 125°C VBus = 600V IC = 25A Tj = 125°C RG = 22Ω Min Typ 1650 250 110 160 10 70 60 50 305 30 60 50 346 40 3.5 mJ 1.5 Max Unit pF nC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 25A IF = 50A IF = 25A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 100 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=1200V 25 2.6 3.2 1.8 320 360 480 1800 3.1 V trr Qrr Reverse Recovery Time Reverse Recovery Charge nC www.microsemi.com 2–6 APTGF25A120T1G – Rev 1 IF = 25A VR = 667V di/dt =200A/µs ns March, 2009 APTGF25A120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.6 1.4 150 125 100 4.7 80 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol