APTGF300U120DG

APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module EK E C VCES = 1200V IC = 300A @ Tc = 80°C Applicatio n • Zero Current Switching resonant mode Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC o f VCEsat • Low profile • RoHS compliant Max ratings 1200 400 300 600 ±20 1780 600A @ 1200V Unit V A V W G CK E CK C EK G Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGF300U120DG – Rev 1 July, 2006 APTGF300U120DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0 V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 300A Tj = 125°C VGE = VCE, IC = 12mA VGE = ±20V, VCE = 0 V Min Typ Max 500 750 3.9 6.5 ±1 Unit µA V V µA 3.3 4 4.5 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω VGE = 15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C R G = 3Ω Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ 21 2.9 1.52 120 50 310 30 130 60 360 40 25 Max Unit nF ns ns mJ 15 Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Min 1200 Typ Max 250 500 Unit V µA A V ns July, 2006 2–5 APTGF300U120DG – Rev 1 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 300A IF = 300A VR = 600V di/dt =4500A/µs 300 2.1 1.9 120 210 22 43 7 15 µC mJ www.microsemi.com APTGF300U120DG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.07 0.12 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol