APTGF30A60T1G

APTGF30A60T1G Phase leg NPT IGBT Power Module 5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11 VCES = 600V IC = 30A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 42 30 100 ±20 140 60A@500V Unit V August, 2007 1–6 APTGF30A60T1G – Rev 0 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF30A60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 30A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω VGE = 15V Tj = 125°C VBus = 400V IC = 30A Tj = 125°C RG = 6.8Ω Min Typ Max 250 500 2.45 6 400 Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 mJ 0.8 Max Unit µA V V nA Unit pF 1.7 4 2.0 2.2 Dynamic Characteristics Min nC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 25A IF = 50A IF = 25A IF = 25A VR = 400V di/dt =200A/µs Min 600 Typ Max 25 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge 30 175 55 485 ns nC www.microsemi.com 2–6 APTGF30A60T1G – Rev 0 August, 2007 25 1.8 2.2 1.6 2.2 V APTGF30A60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.9 1.4 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol