APTGF30TL601G
Three level inverter NPT IGBT Power Module VCES = 600V IC = 30A @ Tc = 80°C
Application • Solar converter • Uninterruptible Power Supplies Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant
All multiple inputs and outputs must be shorted together 5/6 ; 9/10
Q1 to Q4 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 42 30 100 ±20 140 60A@500V Unit V
March, 2009 1-9 APTGF30TL601G – Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF30TL601G
All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 30A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Unit µA V V nA
1.7 4
2.0 2.2
Q1 to Q4 Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω VGE = 15V Tj = 125°C VBus = 400V IC = 30A Tj = 125°C RG = 6.8Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 mJ 0.8 135 0.9 A
°C/W
Max
Unit pF
nC
ns
ns
www.microsemi.com
2-9
APTGF30TL601G – Rev 0
March, 2009
APTGF30TL601G
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 15A IF = 30A IF = 15A IF = 15A VR = 400V IF = 15A VR = 400V Test Conditions VR=600V Tj = 25°C Tj = 150°C Tc = 80°C Min 600 Typ Max 25 500 15 2 2.5 1.6 20 105 21 250 0.24 2 2.4 V ns nC mJ °C/W Unit V µA A
di/dt =200A/µs
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C
di/dt =1000A/µs
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V IF = 30A VR = 400V Test Conditions VR=600V Tj = 25°C Tj = 150°C Tc = 80°C Min 600 Typ Max 25 500 30 1.8 2.2 1.5 25 160 35 480 0.6 1.2 2.2 V ns nC mJ °C/W Unit V µA A
di/dt =200A/µs
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C
di/dt =1000A/µs
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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