APTGF30X60T3G
3 Phase bridge NPT IGBT Power Module
15 16 19 20 18 23 25 29 30 22 28 R1 31 14
VCES = 600V IC = 30A @ Tc = 80°C
Application • Motor control Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant
11 10 12
8 7
4 3 2 13
It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together.
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 42 30 100 ±20 140 60A@500V Unit V A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGF30X60T3G – Rev 0
July, 2007
APTGF30X60T3G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 30A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω VGE = 15V Tj = 125°C VBus = 400V IC = 30A Tj = 125°C RG = 6.8Ω Min Typ Max 250 500 2.45 6 400 Unit µA V V nA
1.7 4
2.0 2.2
Dynamic Characteristics
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Min Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 mJ 0.8 Max Unit pF
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/µs
Min 600
Typ
Max 25 500
Unit V µA A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
25 160 35 480
ns nC
www.microsemi.com
2-6
APTGF30X60T3G – Rev 0
July, 2007
Tj = 125°C
30 1.8 2.2 1.5
2.2 V
APTGF30X60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T − T 25
Min
Typ 50 3952
Max
Unit kΩ K
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.9 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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